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參數(shù)資料
| 型號： | PHX4N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 75K |
| 代理商： | PHX4N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N60E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
PHX2N60
1ms
1s
Zth j-hs, Transient thermal impedance (K/W)
1us
10us
100us
tp, pulse width (s)
10ms
100ms
0.001
0.01
0.1
1
10
D =
tp
tp
T
T
P
D
t
single pulse
D = 0.5
0.2
0.1
0.05
0.02
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
5
10
15
20
25
30
0
2
4
6
8
10
12
PHP3N60
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
5.5 V
6 V
10 V
7 V
VGS = 4.5 V
1
10
100
1000
10000
0.01
0.1
1
10
100
PHX2N60
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
100 us
1 ms
100 ms
DC
tp = 10 us
10 ms
RDSON =VDSID
0
2
4
6
8
10
12
0
1
2
3
4
5
6
PHP3N60
Tj = 25 C
VGS = 5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
6 V
December 1998
4
Rev 1.200
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