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參數(shù)資料
| 型號： | PHX4ND40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors FREDFET, Avalanche energy rated |
| 中文描述： | 2.7 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 73K |
| 代理商： | PHX4ND40E |
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHX4ND40E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 1.5 A;
t
p
= 0.3 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
190
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 4.4 A; t
= 1
μ
s; T
prior to
-
5.5
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
4.4
A
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
Thermal resistance junction
to heatsink
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP. MAX. UNIT
-
4.1
K/W
-
60
-
K/W
1
pulse width and repetition rate limited by T
j
max.
August 1998
2
Rev 1.100
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