參數(shù)資料
型號: PI0512WS
英文描述: 512-Pixel 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Array
中文描述: 512像素50毫米間距寬孔徑光譜二極管陣列
文件頁數(shù): 8/8頁
文件大小: 604K
代理商: PI0512WS
PI0512WS Page 8 of 8 – July 26, 2001
Electro-Optical Characteristics (25
o
C)
Table 4 lists the electro-optical characteristics of PI0512WS sensor chip at 25
o
C.
Table 4. Electro-optical characteristics.
Parameters
Symbol
Min
Typical
50
2500
1.25
×
10
-3
76
75
3.3
×
10
-4
2
180
60
1
600
180 – 1000
Max
Units
m
m
m
m
cm
2
%
%
C/J/cm
2
+/-%
nJ/cm
2
pC
pA
nm
nm
Center-to-center spacing
Aperture width
Pixel area
Fill factor
1
Quantum efficiency
1,2
Responsivity
1,2
Nonuniformity of response
3
Saturation exposure
2
Saturation charge
Average dark current
4
Spectral response peak
Spectral response range
5
A
FF
QE
R
5
Esat
Qsat
55
3
λ
Notes:
(1) Fill factor, quantum efficiency, and responsivity are related by the equation R =
(q
e
λ
/hc)
.
QE
.
FF
.
A, where q
e
is the charge of an electron and hc/
λ
is the energy of a
photon at a given wavelength.
(2) At wavelength of 575 nm (yellow-green) and with no window.
(3) Measured at 50% Vsat with incandescent tungsten lamp filtered with a Schott KG-1
heat-absorbing glass.
(4) Max dark leakage
1.5 x average dark leakage measured with an integration period
of 500 ms at 25
o
C.
(5) From 250-1000 nm, responsivity
20% of its peak value.
2001
AMI Semiconductor
.
Printed in USA.
without notice. Contents may not be reproduced in whole or in part without
the express prior written
permission of
AMIS
. Information furnished
herein is believed to be accurate and reliable. However, no
responsibility is assumed by
AMIS for its use nor for any infringement of patents or other rights granted
by
implication or otherwise under any patent or patent rights of AMIS.
All rights reserved.
Specifications
are subject to change
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