參數(shù)資料
型號(hào): PI3CH401Q
廠商: Pericom Semiconductor Corp.
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 低電壓,5ヘ,4通道2端口NanoSwitch⑩
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 270K
代理商: PI3CH401Q
4
P-0.4 07/27/04
PI3CH401
Low Voltage, 5, 4-Channel
2-Port
NanoSwitch
ADVANCE INFORMATION
Notes:
1.
2.
3.
See test circuit and waveforms.
This parameter is guaranteed but not tested on Propagation Delays.
The switch contributes no propagational delay other than the RC delay of the On-Resistance of the switch and the load capacitance. The time
constant for the switch alone is of the order of 0.25ns for 10pF load. Since this time constant is much smaller than the rise/fall times of typical
driving signals, it adds very little propagational delay to the system. Propagational delay of the switch when used in a system is determined by
the driving circuit on the driving side of the switch and its interaction with the load on the driven side.
Switching Characteristics over 3.3V Operating Range
Parameters
Description
Conditions
(1)
Com.
Typ.
Units
Min.
Max.
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propogation Delay
(2,3)
Ax to Bx,Bx to Ax
See Test Diagram
0.3
ns
Enable Time ENx to Ax or Bx
See Test Diagram
1.5
9.0
Disable Time ENx to Ax or Bx
1.5
9.0
Switching Characteristics over 2.5V Operating Range
Parameters
Description
Conditions
(1)
Com.
Units
Min.
Max.
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propogation Delay
(2,3)
Ax to Bx,Bx to Ax
See Test Diagram
0.3
ns
Enable Time ENx to Ax or Bx
See Test Diagram
1.5
15.0
Disable Time ENx to Ax or Bx
1.5
12.0
Dynamic Electrical Characteristics Over the Operating Range
(T
A
= -40o to +85o, V
CC
= 3.3V ± 10%)
Parameter
Description
Test Condition
X
TALK
Crosstalk
O
IRR
Off-Isolation
BW
-3dB Bandwidth
See Test Diagram
Min.
Typ.
-78
Max.
Units
10 MHz
dB
10 MHz
-60
200
500
MHz
相關(guān)PDF資料
PDF描述
PI3CH401 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.6 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
PI3CH401L Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.7 to 7.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
PI3CH401LE Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.9 to 7.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
PI3CH401QE Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
PI3CH401ZHE Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
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