參數(shù)資料
型號(hào): PI49FCT804TP
廠商: Pericom Semiconductor Corp.
英文描述: Fast CMOS Buffer/Clock Driver
中文描述: 快速CMOS緩沖器/時(shí)鐘驅(qū)動(dòng)器
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 305K
代理商: PI49FCT804TP
2
PS7005B 06/26/01
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PI49FCT804T
Buffer/Clock Driver
Storage Temperature ........................................................65°C to +150°C
Ambient Temperature with Power Applied ........................... 0°C to +70°C
Supply Voltage to Ground Potential (Inputs & Vcc Only) ..0.5V to +7.0V
Supply Voltage to Ground Potential (Outputs & D/O Only) 0.5V to +7.0V
DC Input Voltage .................................................................0.5V to +7.0V
DC Output Current ..........................................................................120mA
Power Dissipation...............................................................................0.5W
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation
of the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC Electrical Characteristics
(Over the Operating Range, T
A
= 0°C to +70°C, V
CC
= 5.0V ± 5%)
Parameters Description
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Units
V
OH
Output HIGH Voltage
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OH
= 24.0mA
2.4
3.3
V
V
OL
Output LOW Current
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OL
= 64mA
0.3
0.55
V
V
IH
Input HIGH Voltage
Guaranteed Logic HIGH Level
2.0
V
V
IL
Input LOW Voltage
Guaranteed Logic LOW Level
0.8
V
I
IH
Input HIGH Current
V
CC
= Max.
V
IN
= V
CC
1
μA
I
IL
Input LOW Current
V
CC
= Max.
V
IN
= GND
1
μA
I
OZH
I
OZL
High Impedance
Output Current
V
CC
= Max.
V
OUT
= V
CC
V
OUT
= GND
1
μA
μA
1
I
I
Input HIGH Current
V
CC
= Max., V
IN
=V
CC
(Max.)
20
μA
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= 18 mA
0.7
1.2
V
I
OS
Short Circuit Current
V
CC
= Max.
(3)
, V
OUT
= GND
60
120
225
mA
V
H
Input Hysteresis
V
CC
= 5V
200
mV
Capacitance
(T
A
= 25°C, f = 1 MHz)
Parameters
(4)
Description
Test Conditions
Typ.
Max.
Units
C
IN
Input Capacitance
V
IN
= 0V
6
10
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is determined by device characterization but is not production tested.
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
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