參數(shù)資料
型號(hào)： PIC12C509A-04I/MF
廠商： Microchip Technology
文件頁(yè)數(shù)： 91/113頁(yè)
文件大小： 0K
描述： IC MCU OTP 1KX12 8DFN
產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
標(biāo)準(zhǔn)包裝： 60
系列： PIC® 12C
核心處理器： PIC
芯體尺寸： 8-位
速度： 4MHz
外圍設(shè)備： POR，WDT
輸入/輸出數(shù)： 5
程序存儲(chǔ)器容量： 1.5KB（1K x 12）
程序存儲(chǔ)器類型： OTP
RAM 容量： 41 x 8
電壓 - 電源 (Vcc/Vdd)： 3 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-VDFN 裸露焊盤
包裝： 管件
配用： AC164324-ND - MODULE SKT FOR MPLAB 8DFN/16QFN
XLT08DFN2-ND - SOCKET TRANSITION ICE 14DIP/8DFN
XLT08DFN-ND - SOCKET TRANSITION ICE 8DFN
AC164032-ND - ADAPTER PICSTART PLUS 8DFN/DIP
AC124001-ND - MODULE SKT PROMATEII 8DIP/SOIC
其它名稱： PIC12C509A04I/MF
1999 Microchip Technology Inc.
DS40139E-page 79
PIC12C5XX
13.0
ELECTRICAL CHARACTERISTICS - PIC12C508A/PIC12C509A/
PIC12LC508A/PIC12LC509A/PIC12CR509A/PIC12CE518/PIC12CE519/
PIC12LCE518/PIC12LCE519/PIC12LCR509A
Absolute Maximum Ratings
Ambient Temperature under bias ........................................................................................................... –40°C to +125°C
Storage Temperature ............................................................................................................................. –65°C to +150°C
Voltage on VDD with respect to VSS .................................................................................................................0 to +7.0 V
Voltage on MCLR with respect to VSS...............................................................................................................0 to +14 V
Voltage on all other pins with respect to VSS ............................................................................... –0.3 V to (VDD + 0.3 V)
Total Power Dissipation(1) .................................................................................................................................... 700 mW
Max. Current out of VSS pin .................................................................................................................................. 200 mA
Max. Current into VDD pin ..................................................................................................................................... 150 mA
Input Clamp Current, IIK (VI < 0 or VI > VDD)
.................................................................................................................... ±20 mA
Output Clamp Current, IOK (VO < 0 or VO > VDD)
............................................................................................................. ±20 mA
Max. Output Current sunk by any I/O pin ................................................................................................................ 25 mA
Max. Output Current sourced by any I/O pin........................................................................................................... 25 mA
Max. Output Current sourced by I/O port (GPIO) ................................................................................................. 100 mA
Max. Output Current sunk by I/O port (GPIO )...................................................................................................... 100 mA
Note 1: Power Dissipation is calculated as follows: PDIS = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)
NOTICE: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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