參數(shù)資料
型號(hào)： PIC12LF1840T-I/SN
廠商： Microchip Technology
文件頁(yè)數(shù)： 121/122頁(yè)
文件大?。?/td> 0K
描述： MCU 7KB FLASH 256B RAM XLP 8SOIC
標(biāo)準(zhǔn)包裝： 3,300
系列： PIC® XLP™ 12F
核心處理器： PIC
芯體尺寸： 8-位
速度： 32MHz
連通性： I²C，LIN，SPI，UART/USART
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 5
程序存儲(chǔ)器容量： 7KB（4K x 14）
程序存儲(chǔ)器類型： 閃存
EEPROM 大?。?/td> 256 x 8
RAM 容量： 256 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 4x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
包裝： 帶卷 (TR)
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PIC12(L)F1840
DS41441B-page 98
Preliminary
2011 Microchip Technology Inc.
11.2
Using the Data EEPROM
The data EEPROM is a high-endurance, byte address-
able array that has been optimized for the storage of
frequently changing information (e.g., program vari-
ables or other data that are updated often). When vari-
ables in one section change frequently, while variables
in another section do not change, it is possible to
exceed the total number of write cycles to the
EEPROM without exceeding the total number of write
cycles to a single byte. Refer to Section 30.0 “Electri-
. If this is the case, then a refresh
of the array must be performed. For this reason, vari-
ables that change infrequently (such as constants, IDs,
calibration, etc.) should be stored in Flash program
memory.
11.2.1
READING THE DATA EEPROM
MEMORY
To read a data memory location, the user must write the
address to the EEADRL register, clear the EEPGD and
CFGS control bits of the EECON1 register, and then
set control bit RD. The data is available at the very next
cycle, in the EEDATL register; therefore, it can be read
in the next instruction. EEDATL will hold this value until
another read or until it is written to by the user (during
a write operation).
EXAMPLE 11-1:
DATA EEPROM READ
11.2.2
WRITING TO THE DATA EEPROM
MEMORY
To write an EEPROM data location, the user must first
write the address to the EEADRL register and the data
to the EEDATL register. Then the user must follow a
specific sequence to initiate the write for each byte.
The write will not initiate if the above sequence is not
followed exactly (write 55h to EECON2, write AAh to
EECON2, then set WR bit) for each byte. Interrupts
should be disabled during this code segment.
Additionally, the WREN bit in EECON1 must be set to
enable write. This mechanism prevents accidental
writes to data EEPROM due to errant (unexpected)
code execution (i.e., lost programs). The user should
keep the WREN bit clear at all times, except when
updating EEPROM. The WREN bit is not cleared
by hardware.
After a write sequence has been initiated, clearing the
WREN bit will not affect this write cycle. The WR bit will
be inhibited from being set unless the WREN bit is set.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EE Write Complete
Interrupt Flag bit (EEIF) is set. The user can either
enable this interrupt or poll this bit. EEIF must be
cleared by software.
11.2.3
PROTECTION AGAINST SPURIOUS
WRITE
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, WREN is cleared. Also, the
Power-up Timer (64 ms duration) prevents EEPROM
write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during:
Brown-out
Power Glitch
Software Malfunction
11.2.4
DATA EEPROM OPERATION
DURING CODE-PROTECT
Data memory can be code-protected by programming
the CPD bit in the Configuration Word 1 (Register 4-1)
to ‘0’.
When the data memory is code-protected, only the
CPU is able to read and write data to the data
EEPROM. It is recommended to code-protect the pro-
gram memory when code-protecting data memory.
This prevents anyone from replacing your program with
a program that will access the contents of the data
EEPROM.
Note:
Data EEPROM can be read regardless of
the setting of the CPD bit.
BANKSEL EEADRL
;
MOVLW
DATA_EE_ADDR ;
MOVWF
EEADRL
;Data Memory
;Address to read
BCF
EECON1, CFGS ;Deselect Config space
BCF
EECON1, EEPGD;Point to DATA memory
BSF
EECON1, RD
;EE Read
MOVF
EEDATL, W
;W = EEDATL
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