1997 Microchip Technology Inc.
DS30234D-page 215
PIC16C6X
Applicable Devices
61 62 62A R62 63 R63 64 64A R64 65 65A R65 66 67
ELECTRICAL CHARACTERISTICS FOR PIC16C65
Absolute Maximum Ratings
Ambient temperature under bias................................................................................................................-55C to +85C
Storage temperature............................................................................................................................... -65C to +150C
Voltage on any pin with respect to V
SS
(except V
DD
, MCLR, and RA4) ..........................................-0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
.......................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to V
SS
(Note 2) ...............................................................................................0V to +14V
Voltage on RA4 with respect to Vss.................................................................................................................0V to +14V
Total power dissipation (Note 1).................................................................................................................................1.0W
Maximum current out of V
SS
pin............................................................................................................................300 mA
Maximum current into V
DD
pin...............................................................................................................................250 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
......................................................................................................................±
20 mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
...............................................................................................................±
20 mA
Maximum output current sunk by any I/O pin...........................................................................................................25 mA
Maximum output current sourced by any I/O pin .....................................................................................................25 mA
Maximum current sunk by
PORTA, PORTB, and PORTE (combined)...................................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (combined) .............................................................200 mA
Maximum current sunk by PORTC and PORTD (combined).................................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined)............................................................................200 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
)
Note 2:
Voltage spikes below V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin rather than pulling
this pin directly to V
SS
.
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
20.0
TABLE 20-1:
CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS
AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)
OSC
PIC16C65-04
PIC16C65-10
PIC16C65-20
PIC16LC65-04
JW Devices
RC
V
DD
: 4.0V to 6.0V
I
DD
: 5 mA max. at 5.5V
I
PD
: 21
μ
A max. at 4V
Freq: 4 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 2.7 mA typ. at 5.5V
I
PD
: 1.5
μ
A typ. at 4V
Freq: 4 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 2.7 mA typ. at 5.5V
I
PD
: 1.5
μ
A typ. at 4V
Freq: 4 MHz max.
V
DD
: 3.0V to 6.0V
I
DD
: 3.8 mA max. at 3V
I
PD
: 800
μ
A max. at 3V
Freq: 4 MHz max.
V
DD
: 4.0V to 6.0V
I
DD
: 5 mA max. at 5.5V
I
PD
: 21
μ
A max. at 4V
Freq: 4 MHz max.
XT
V
DD
: 4.0V to 6.0V
I
DD
: 5 mA max. at 5.5V
I
PD
: 21
μ
A max. at 4V
Freq: 4 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 2.7 mA typ. at 5.5V
I
PD
: 1.5
μ
A typ. at 4V
Freq: 4 MHz max.
V
DD
: 4.5V to 5.5V
I
DD
: 2.7 mA typ. at 5.5V
I
PD
: 1.5
μ
A typ. at 4V
Freq: 4 MHz max.
V
DD
: 3.0V to 6.0V
I
DD
: 3.8 mA max. at 3V
I
PD
: 800
μ
A max. at 3V
Freq: 4 MHz max.
V
DD
: 4.0V to 6.0V
I
DD
: 5 mA max. at 5.5V
I
PD
: 21
μ
A max. at 4V
Freq: 4 MHz max.
HS
V
DD
:4.5V to 5.5V
V
DD
: 4.5V to 5.5V
V
DD
: 4.5V to 5.5V
Not recommended for
use in HS mode
V
DD
: 4.5V to 5.5V
I
DD
: 13.5 mA typ. at
5.5V
I
DD
: 15 mA max. at 5.5V I
DD
: 30 mA max. at
5.5V
I
DD
: 30 mA max. at 5.5V
I
PD
: 1.5
μ
A typ. at 4.5V
I
PD
1.0
μ
A typ. at 4.5V
I
PD
: 1.5
μ
A typ. at 4.5V
I
PD
: 1.5
μ
A typ. at 4.5V
Freq: 4 MHz max.
Freq: 10 MHz max.
Freq: 20 MHz max.
Freq: 20 MHz max.
LP
V
DD
: 4.0V to 6.0V
I
DD
: 52.5
μ
A typ.
at 32 kHz, 4.0V
I
PD
: 0.9
μ
A typ. at 4.0V
Freq: 200 kHz max.
Not recommended for
use in LP mode
Not recommended for
use in LP mode
V
DD
: 3.0V to 6.0V
I
DD
: 105
μ
A max.
at 32 kHz, 3.0V
I
PD
: 800
μ
A max. at
3.0V
Freq: 200 kHz max.
V
DD
: 3.0V to 6.0V
I
DD
: 105
μ
A max.
at 32 kHz, 3.0V
I
PD
: 800
μ
A max. at
3.0V
Freq: 200 kHz max.
The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is recom-
mended that the user select the device type that ensures the specifications required.