參數(shù)資料
型號: PIC16CR74T-I/ML
廠商: Microchip Technology
文件頁數(shù): 150/172頁
文件大?。?/td> 0K
描述: IC PIC MCU 4KX14 44QFN
標(biāo)準(zhǔn)包裝: 1,600
系列: PIC® 16C
核心處理器: PIC
芯體尺寸: 8-位
速度: 20MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 33
程序存儲器容量: 7KB(4K x 14)
程序存儲器類型: ROM
RAM 容量: 192 x 8
電壓 - 電源 (Vcc/Vdd): 2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x8b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 44-VQFN 裸露焊盤
包裝: 帶卷 (TR)
2007 Microchip Technology Inc.
DS39599G-page 77
PIC18F2220/2320/4220/4320
6.5
Writing to Flash Program Memory
The programming block size is 4 words or 8 bytes.
Word or byte programming is not supported.
Table writes are used internally to load the holding reg-
isters needed to program the Flash memory. There are
8 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte,
the TBLWT instruction has to be executed 8 times for
each programming operation. All of the table write
operations will essentially be short writes because only
the holding registers are written. At the end of updating
8 registers, the EECON1 register must be written to, to
start the programming operation with a long write.
The long write is necessary for programming the inter-
nal Flash. Instruction execution is halted while in a long
write cycle. The long write will be terminated by the
internal programming timer.
FIGURE 6-5:
TABLE WRITES TO FLASH PROGRAM MEMORY
6.5.1
FLASH PROGRAM MEMORY WRITE
SEQUENCE
The sequence of events for programming an internal
program memory location should be:
1.
Read 64 bytes into RAM.
2.
Update data values in RAM as necessary.
3.
Load Table Pointer with address being erased.
4.
Do the row erase procedure (see Section 6.4.1
5.
Load Table Pointer with address of first byte
being written.
6.
Write the first 8 bytes into the holding registers
with auto-increment.
7.
Set the EECON1 register for the write operation:
set EEPGD bit to point to program
memory;
clear the CFGS bit to access program
memory;
set WREN bit to enable byte writes.
8.
Disable interrupts.
9.
Write 55h to EECON2.
10. Write AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
2 ms using internal timer).
13. Execute a NOP.
14. Re-enable interrupts.
15. Repeat steps 6-14 seven times, to write 64
bytes.
16. Verify the memory (table read).
This procedure will require about 18 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 6-3.
Holding Register
TABLAT
Holding Register
TBLPTR = xxxxx7
Holding Register
TBLPTR = xxxxx1
Holding Register
TBLPTR = xxxxx0
8
Write Register
TBLPTR = xxxxx2
Program Memory
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