參數(shù)資料
型號： PIC16CR77-I/PT
廠商： Microchip Technology
文件頁數(shù)： 149/172頁
文件大?。?/td> 0K
描述： IC PIC MCU 8KX14 44TQFP
標(biāo)準包裝： 160
系列： PIC® 16C
核心處理器： PIC
芯體尺寸： 8-位
速度： 20MHz
連通性： I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 33
程序存儲器容量： 14KB（8K x 14）
程序存儲器類型： ROM
RAM 容量： 368 x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x8b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 44-TQFP
包裝： 托盤
PIC18F2220/2320/4220/4320
DS39599G-page 76
2007 Microchip Technology Inc.
6.4
Erasing Flash Program Memory
The minimum erase block size is 32 words or 64 bytes
under firmware control. Only through the use of an
external programmer, or through ICSP control, can
larger blocks of program memory be bulk erased. Word
erase in Flash memory is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased;
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash pro-
gram memory. The CFGS bit must be clear to access
program Flash and data EEPROM memory. The
WREN bit must be set to enable write operations. The
FREE bit is set to select an erase operation. The WR
bit is set as part of the required instruction sequence
(as shown in Example 6-2) and starts the actual erase
operation. It is not necessary to load the TABLAT
register with any data as it is ignored.
For protection, the write initiate sequence using
EECON2 must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
6.4.1
FLASH PROGRAM MEMORY
ERASE SEQUENCE
The sequence of events for erasing a block of internal
program memory location is:
1.
Load Table Pointer with address of row being
erased.
2.
Set the EECON1 register for the erase operation:
set EEPGD bit to point to program
memory;
clear the CFGS bit to access program
memory;
set WREN bit to enable writes;
set FREE bit to enable the erase.
3.
Disable interrupts.
4.
Write 55h to EECON2.
5.
Write AAh to EECON2.
6.
Set the WR bit. This will begin the row erase
cycle.
7.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
8.
Execute a NOP.
9.
Re-enable interrupts.
EXAMPLE 6-2:
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
CODE_ADDR_UPPER
; load TBLPTR with the base
MOVWF
TBLPTRU
; address of the memory block
MOVLW
CODE_ADDR_HIGH
MOVWF
TBLPTRH
MOVLW
CODE_ADDR_LOW
MOVWF
TBLPTRL
ERASE_ROW
BSF
EECON1,EEPGD
; point to Flash program memory
BSF
EECON1,WREN
; enable write to memory
BSF
EECON1,FREE
; enable Row Erase operation
BCF
INTCON,GIE
; disable interrupts
MOVLW
55h
MOVWF
EECON2
; write 55H
Required
MOVLW
AAh
Sequence
MOVWF
EECON2
; write AAH
BSF
EECON2,WR
; start erase (CPU stall)
NOP
BSF
INTCON,GIE
; re-enable interrupts
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