- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄3887 > PIC16F870T-E/SS (Microchip Technology)IC MCU CMOS 20MHZ 2K FLSH 28SSOP PDF資料下載
參數(shù)資料
| 型號： | PIC16F870T-E/SS |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 66/143頁 |
| 文件大小： | 0K |
| 描述： | IC MCU CMOS 20MHZ 2K FLSH 28SSOP |
| 標(biāo)準(zhǔn)包裝： | 2,100 |
| 系列： | PIC® 16F |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 連通性： | UART/USART |
| 外圍設(shè)備： | 欠壓檢測/復(fù)位，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 22 |
| 程序存儲器容量： | 3.5KB（2K x 14） |
| 程序存儲器類型： | 閃存 |
| EEPROM 大?。?/td> | 64 x 8 |
| RAM 容量： | 128 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 4 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 5x10b |
| 振蕩器型： | 外部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 28-SSOP（0.209"，5.30mm 寬） |
| 包裝： | 帶卷 (TR) |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁當(dāng)前第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁
2003 Microchip Technology Inc.
DS30569B-page 27
PIC16F870/871
3.0
DATA EEPROM AND FLASH
PROGRAM MEMORY
The Data EEPROM and FLASH Program Memory are
readable and writable during normal operation over the
entire VDD range. A bulk erase operation may not be
issued from user code (which includes removing code
protection). The data memory is not directly mapped in
the register file space. Instead, it is indirectly addressed
through the Special Function Registers (SFR).
There are six SFRs used to read and write the program
and data EEPROM memory. These registers are:
EECON1
EECON2
EEDATA
EEDATH
EEADR
EEADRH
The EEPROM data memory allows byte read and write.
When interfacing to the data memory block, EEDATA
holds the 8-bit data for read/write and EEADR holds the
address of the EEPROM location being accessed. The
registers EEDATH and EEADRH are not used for data
EEPROM access. The PIC16F870/871 devices have
64 bytes of data EEPROM with an address range from
0h to 3Fh.
The EEPROM data memory is rated for high erase/
write cycles. The write time is controlled by an on-chip
timer. The write time will vary with voltage and temper-
ature, as well as from chip-to-chip. Please refer to the
specifications for exact limits.
The program memory allows word reads and writes.
Program memory access allows for checksum calcula-
tion and calibration table storage. A byte or word write
automatically erases the location and writes the new
data (erase before write). Writing to program memory
will cease operation until the write is complete. The pro-
gram memory cannot be accessed during the write,
therefore code cannot execute. During the write opera-
tion, the oscillator continues to clock the peripherals,
and therefore, they continue to operate. Interrupt
events will be detected and essentially “queued” until
the write is completed. When the write completes, the
next instruction in the pipeline is executed and the
branch to the interrupt vector address will occur.
When interfacing to the program memory block, the
EEDATH:EEDATA registers form a two-byte word,
which holds the 14-bit data for read/write. The
EEADRH:EEADR registers form a two-byte word,
which holds the 13-bit address of the FLASH location
being accessed. The PIC16F870/871 devices have
2K words of program FLASH with an address range
from 0h to 7FFh. The unused upper bits in both the
EEDATH and EEDATA registers all read as ‘0’s.
The value written to program memory does not need to
be a valid instruction. Therefore, up to 14-bit numbers
can be stored in memory for use as calibration param-
eters, serial numbers, packed 7-bit ASCII, etc. Execut-
ing a program memory location containing data that
forms an invalid instruction results in a NOP.
3.1
EEADR
The address registers can address up to a maximum of
256 bytes of data EEPROM or up to a maximum of
8K words
of
program
FLASH.
However,
the
PIC16F870/871 have 64 bytes of data EEPROM and
2K words of program FLASH.
When selecting a program address value, the MSByte
of the address is written to the EEADRH register and
the LSByte is written to the EEADR register. When
selecting a data address value, only the LSByte of the
address is written to the EEADR register.
On the PIC16F870/871 devices, the upper two bits of
the EEADR must always be cleared to prevent inad-
vertent access to the wrong location in data EEPROM.
This also applies to the program memory. The upper
five MSbits of EEADRH must always be clear during
program FLASH access.
3.2
EECON1 and EECON2 Registers
The EECON1 register is the control register for config-
uring and initiating the access. The EECON2 register is
not a physically implemented register, but is used
exclusively in the memory write sequence to prevent
inadvertent writes.
There are many bits used to control the read and write
operations to EEPROM data and FLASH program
memory. The EEPGD bit determines if the access will
be a program or data memory access. When clear, any
subsequent operations will work on the EEPROM data
memory. When set, all subsequent operations will
operate in the program memory.
Read operations only use one additional bit, RD, which
initiates the read operation from the desired memory
location. Once this bit is set, the value of the desired
memory location will be available in the data registers.
This bit cannot be cleared by firmware. It is automati-
cally cleared at the end of the read operation. For
EEPROM data memory reads, the data will be avail-
able in the EEDATA register in the very next instruction
cycle after the RD bit is set. For program memory
reads,
the
data
will
be
loaded
into
the
EEDATH:EEDATA registers, following the second
instruction after the RD bit is set.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PIC16F870T-E/SO | IC MCU CMOS 20MHZ 2K FLSH 28SOIC |
| PIC16F84AT-20E/SS | IC MCU CMOS 20MHZ 1K FLSH 20SSOP |
| PIC16F84AT-20E/SO | IC MCU CMOS 20MHZ 1K FLSH 18SOIC |
| 22-15-3133 | CONN FFC/FPC 13POS .100 RT ANG |
| PIC16F84AT-04E/SS | IC MCU CMOS 4MHZ 1K FLASH 20SSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PIC16F870T-I/SO | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16F870T-I/SS | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16F871-E/L | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16F871-E/P | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16F871-E/PT | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。