IDD Supply Current
參數(shù)資料
型號: PIC16F871T-E/L
廠商: Microchip Technology
文件頁數(shù): 27/143頁
文件大?。?/td> 0K
描述: IC MCU CMOS 20MHZ 2K FLSH 44PLCC
標準包裝: 500
系列: PIC® 16F
核心處理器: PIC
芯體尺寸: 8-位
速度: 20MHz
連通性: UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 33
程序存儲器容量: 3.5KB(2K x 14)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 64 x 8
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 4 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 外部
工作溫度: -40°C ~ 125°C
封裝/外殼: 44-LCC(J 形引線)
包裝: 帶卷 (TR)
PIC16F870/871
DS30569B-page 120
2003 Microchip Technology Inc.
IDD
Supply Current(2,5)
D010
D010A
PIC16LF870/871
0.6
20
2.0
35
mA
A
XT, RC osc configuration
FOSC = 4 MHz, VDD = 3.0V (Note 4)
LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
D010
D013
PIC16F870/871
1.6
7
4
15
mA
XT, RC osc configuration
FOSC = 4 MHz, VDD = 5.5V (Note 4)
HS osc configuration
FOSC = 20 MHz, VDD = 5.5V, -40
°C to +85°C
HS osc configuration
FOSC = 10 MHz, VDD = 5.5V, -40
°C to +125°C
D015*
IBOR Brown-out Reset
Current(6)
—85
200
A BOR enabled, VDD = 5.0V
IPD
Power-down Current(3,5)
D020
D021
D021A
PIC16LF870/871
7.5
0.8
0.9
30
4.5
5
A
VDD = 3.0V, WDT enabled, -40
°C to +85°C
VDD = 3.0V, WDT disabled, 0
°C to +70°C
VDD = 3.0V, WDT disabled, -40
°C to +85°C
D020
D20A
D021
D021A
D21B
PIC16F870/871
10.5
1.5
42
60
16
19
30
A
VDD = 4.0V, WDT enabled, -40
°C to +85°C
VDD = 4.0V, WDT enabled, -40
°C to +125°C
VDD = 4.0V, WDT disabled, -0
°C to +70°C
VDD = 4.0V, WDT disabled, -40
°C to +85°C
VDD = 4.0V, WDT disabled, -40
°C to +125°C
D023*
IBOR Brown-out Reset
Current(6)
—85
200
A BOR enabled, VDD = 5.0V
14.1
DC Characteristics: PIC16F870/871 (Industrial, Extended)
PIC16LF870/871 (Commercial, Industrial) (Continued)
PIC16LF870/871
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for Industrial
0°C
≤ TA ≤ +70°C for Commercial
PIC16F870/871
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for Industrial
-40°C
≤ TA ≤ +125°C for Extended
Param
No.
Sym
Characteristic
Min
Typ Max Units
Conditions
*
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
This is the limit to which VDD can be lowered without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature also have
an impact on the current consumption.
The test conditions for all IDD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3:
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4:
For RC osc configuration, current through REXT is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2REXT (mA) with REXT in k
.
5:
Timer1 oscillator (when enabled) adds approximately 20
A to the specification. This value is from
characterization and is for design guidance only. This is not tested.
6:
The
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
7:
When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.
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