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    參數(shù)資料
    

    


    


    
型號(hào)：
PIC16F873-20/SP

    

    
廠商：
Microchip Technology

    

    
文件頁(yè)數(shù)：
157/218頁(yè)

    

    
文件大小：
0K

    

    
描述：
IC MCU FLASH 4KX14 EE 28DIP

    

    
產(chǎn)品培訓(xùn)模塊：
Asynchronous Stimulus
    
	8-bit PIC® Microcontroller Portfolio
    		

    

    
標(biāo)準(zhǔn)包裝：
15

    

    
系列：
PIC® 16F

    

    
核心處理器：
PIC
    		

    

    
芯體尺寸：
8-位
    		

    

    
速度：
20MHz
    		

    

    
連通性：
I²C，SPI，UART/USART
    		

    

    
外圍設(shè)備：
欠壓檢測(cè)/復(fù)位，POR，PWM，WDT
    		

    

    
輸入/輸出數(shù)：
22
    		

    

    
程序存儲(chǔ)器容量：
7KB（4K x 14）
    		

    

    
程序存儲(chǔ)器類型：
閃存
    		

    

    
EEPROM 大?。?/td>
128 x 8
    		

    

    
RAM 容量：
192 x 8
    		

    

    
電壓 - 電源 (Vcc/Vdd)：
4 V ~ 5.5 V
    		

    

    
數(shù)據(jù)轉(zhuǎn)換器：
A/D 5x10b
    		

    

    
振蕩器型：
外部
    		

    

    
工作溫度：
0°C ~ 70°C
    		

    

    
封裝/外殼：
28-DIP（0.300"，7.62mm）
    		

    

    
包裝：
管件
    		

    

    

    

	
    
    
    
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     2001 Microchip Technology Inc.
    DS30292C-page 41
    PIC16F87X
    4.0
    DATA EEPROM AND FLASH
    PROGRAM MEMORY
    The Data EEPROM and FLASH Program Memory are
    readable and writable during normal operation over the
    entire VDD range. These operations take place on a sin-
    gle byte for Data EEPROM memory and a single word
    for Program memory. A write operation causes an
    erase-then-write operation to take place on the speci-
    fied byte or word. A bulk erase operation may not be
    issued from user code (which includes removing code
    protection).
    Access to program memory allows for checksum calcu-
    lation. The values written to program memory do not
    need to be valid instructions. Therefore, up to 14-bit
    numbers can be stored in memory for use as calibra-
    tion parameters, serial numbers, packed 7-bit ASCII,
    etc. Executing a program memory location containing
    data that form an invalid instruction, results in the exe-
    cution of a NOP instruction.
    The EEPROM Data memory is rated for high erase/
    write cycles (specification D120). The FLASH program
    memory is rated much lower (specification D130),
    because EEPROM data memory can be used to store
    frequently updated values. An on-chip timer controls
    the write time and it will vary with voltage and tempera-
    ture, as well as from chip to chip. Please refer to the
    specifications for exact limits (specifications D122 and
    D133).
    A byte or word write automatically erases the location
    and writes the new value (erase before write). Writing
    to EEPROM data memory does not impact the opera-
    tion of the device. Writing to program memory will
    cease the execution of instructions until the write is
    complete. The program memory cannot be accessed
    during the write. During the write operation, the oscilla-
    tor continues to run, the peripherals continue to func-
    tion and interrupt events will be detected and
    essentially “queued” until the write is complete. When
    the write completes, the next instruction in the pipeline
    is executed and the branch to the interrupt vector will
    take place, if the interrupt is enabled and occurred dur-
    ing the write.
    Read and write access to both memories take place
    indirectly through a set of Special Function Registers
    (SFR). The six SFRs used are:
     EEDATA
     EEDATH
     EEADR
     EEADRH
     EECON1
     EECON2
    The EEPROM data memory allows byte read and write
    operations without interfering with the normal operation
    of the microcontroller. When interfacing to EEPROM
    data memory, the EEADR register holds the address to
    be accessed. Depending on the operation, the EEDATA
    register holds the data to be written, or the data read, at
    the address in EEADR. The PIC16F873/874 devices
    have 128 bytes of EEPROM data memory and there-
    fore, require that the MSb of EEADR remain clear. The
    EEPROM data memory on these devices do not wrap
    around to 0, i.e., 0x80 in the EEADR does not map to
    0x00. The PIC16F876/877 devices have 256 bytes of
    EEPROM data memory and therefore, uses all 8-bits of
    the EEADR.
    The FLASH program memory allows non-intrusive
    read access, but write operations cause the device to
    stop executing instructions, until the write completes.
    When
    interfacing
    to
    the
    program
    memory,
    the
    EEADRH:EEADR registers form a two-byte word,
    which holds the 13-bit address of the memory location
    being
    accessed.
    The
    register
    combination
    of
    EEDATH:EEDATA holds the 14-bit data for writes, or
    reflects the value of program memory after a read oper-
    ation. Just as in EEPROM data memory accesses, the
    value of the EEADRH:EEADR registers must be within
    the valid range of program memory, depending on the
    device: 0000h to 1FFFh for the PIC16F873/874, or
    0000h to 3FFFh for the PIC16F876/877. Addresses
    outside of this range do not wrap around to 0000h (i.e.,
    4000h does not map to 0000h on the PIC16F877).
    4.1
    EECON1 and EECON2 Registers
    The EECON1 register is the control register for config-
    uring and initiating the access. The EECON2 register is
    not a physically implemented register, but is used
    exclusively in the memory write sequence to prevent
    inadvertent writes.
    There are many bits used to control the read and write
    operations to EEPROM data and FLASH program
    memory. The EEPGD bit determines if the access will
    be a program or data memory access. When clear, any
    subsequent operations will work on the EEPROM data
    memory. When set, all subsequent operations will
    operate in the program memory.
    Read operations only use one additional bit, RD, which
    initiates the read operation from the desired memory
    location. Once this bit is set, the value of the desired
    memory location will be available in the data registers.
    This bit cannot be cleared by firmware. It is automati-
    cally cleared at the end of the read operation. For
    EEPROM data memory reads, the data will be avail-
    able in the EEDATA register in the very next instruction
    cycle after the RD bit is set. For program memory
    reads,
    the
    data
    will
    be
    loaded
    into
    the
    EEDATH:EEDATA registers, following the second
    instruction after the RD bit is set.
    
    
    
    
    
    


    


    

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PIC16F873A-E/ML
功能描述:8位微控制器 -MCU 7KB 192 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT

    

    
PIC16F873A-E/SO
功能描述:8位微控制器 -MCU 7KB 192 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT

    

    
PIC16F873A-E/SP
功能描述:8位微控制器 -MCU 7KB 192 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT

    

    
PIC16F873A-E/SS
功能描述:8位微控制器 -MCU 7KB 192 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT

    

    
PIC16F873A-I/ML
功能描述:8位微控制器 -MCU 7KB 192 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT

    

    
    
    
    
	
    	
    
    
     
     
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