- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄10853 > PIC16LF871T-I/L (Microchip Technology)IC MCU FLASH 2KX14 EE A/D 44PLCC PDF資料下載
參數(shù)資料
| 型號(hào)： | PIC16LF871T-I/L |
| 廠商： | Microchip Technology |
| 文件頁(yè)數(shù)： | 66/143頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU FLASH 2KX14 EE A/D 44PLCC |
| 標(biāo)準(zhǔn)包裝： | 500 |
| 系列： | PIC® 16F |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 連通性： | UART/USART |
| 外圍設(shè)備： | 欠壓檢測(cè)/復(fù)位，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 33 |
| 程序存儲(chǔ)器容量： | 3.5KB（2K x 14） |
| 程序存儲(chǔ)器類型： | 閃存 |
| EEPROM 大?。?/td> | 64 x 8 |
| RAM 容量： | 128 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 8x10b |
| 振蕩器型： | 外部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 44-LCC（J 形引線） |
| 包裝： | 帶卷 (TR) |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)當(dāng)前第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)
2003 Microchip Technology Inc.
DS30569B-page 27
PIC16F870/871
3.0
DATA EEPROM AND FLASH
PROGRAM MEMORY
The Data EEPROM and FLASH Program Memory are
readable and writable during normal operation over the
entire VDD range. A bulk erase operation may not be
issued from user code (which includes removing code
protection). The data memory is not directly mapped in
the register file space. Instead, it is indirectly addressed
through the Special Function Registers (SFR).
There are six SFRs used to read and write the program
and data EEPROM memory. These registers are:
EECON1
EECON2
EEDATA
EEDATH
EEADR
EEADRH
The EEPROM data memory allows byte read and write.
When interfacing to the data memory block, EEDATA
holds the 8-bit data for read/write and EEADR holds the
address of the EEPROM location being accessed. The
registers EEDATH and EEADRH are not used for data
EEPROM access. The PIC16F870/871 devices have
64 bytes of data EEPROM with an address range from
0h to 3Fh.
The EEPROM data memory is rated for high erase/
write cycles. The write time is controlled by an on-chip
timer. The write time will vary with voltage and temper-
ature, as well as from chip-to-chip. Please refer to the
specifications for exact limits.
The program memory allows word reads and writes.
Program memory access allows for checksum calcula-
tion and calibration table storage. A byte or word write
automatically erases the location and writes the new
data (erase before write). Writing to program memory
will cease operation until the write is complete. The pro-
gram memory cannot be accessed during the write,
therefore code cannot execute. During the write opera-
tion, the oscillator continues to clock the peripherals,
and therefore, they continue to operate. Interrupt
events will be detected and essentially “queued” until
the write is completed. When the write completes, the
next instruction in the pipeline is executed and the
branch to the interrupt vector address will occur.
When interfacing to the program memory block, the
EEDATH:EEDATA registers form a two-byte word,
which holds the 14-bit data for read/write. The
EEADRH:EEADR registers form a two-byte word,
which holds the 13-bit address of the FLASH location
being accessed. The PIC16F870/871 devices have
2K words of program FLASH with an address range
from 0h to 7FFh. The unused upper bits in both the
EEDATH and EEDATA registers all read as ‘0’s.
The value written to program memory does not need to
be a valid instruction. Therefore, up to 14-bit numbers
can be stored in memory for use as calibration param-
eters, serial numbers, packed 7-bit ASCII, etc. Execut-
ing a program memory location containing data that
forms an invalid instruction results in a NOP.
3.1
EEADR
The address registers can address up to a maximum of
256 bytes of data EEPROM or up to a maximum of
8K words
of
program
FLASH.
However,
the
PIC16F870/871 have 64 bytes of data EEPROM and
2K words of program FLASH.
When selecting a program address value, the MSByte
of the address is written to the EEADRH register and
the LSByte is written to the EEADR register. When
selecting a data address value, only the LSByte of the
address is written to the EEADR register.
On the PIC16F870/871 devices, the upper two bits of
the EEADR must always be cleared to prevent inad-
vertent access to the wrong location in data EEPROM.
This also applies to the program memory. The upper
five MSbits of EEADRH must always be clear during
program FLASH access.
3.2
EECON1 and EECON2 Registers
The EECON1 register is the control register for config-
uring and initiating the access. The EECON2 register is
not a physically implemented register, but is used
exclusively in the memory write sequence to prevent
inadvertent writes.
There are many bits used to control the read and write
operations to EEPROM data and FLASH program
memory. The EEPGD bit determines if the access will
be a program or data memory access. When clear, any
subsequent operations will work on the EEPROM data
memory. When set, all subsequent operations will
operate in the program memory.
Read operations only use one additional bit, RD, which
initiates the read operation from the desired memory
location. Once this bit is set, the value of the desired
memory location will be available in the data registers.
This bit cannot be cleared by firmware. It is automati-
cally cleared at the end of the read operation. For
EEPROM data memory reads, the data will be avail-
able in the EEDATA register in the very next instruction
cycle after the RD bit is set. For program memory
reads,
the
data
will
be
loaded
into
the
EEDATH:EEDATA registers, following the second
instruction after the RD bit is set.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PIC16LF877T-04/L | IC MCU FLASH 8KX14 EE A/D 44PLCC |
| PIC16LF877T-04I/PT | IC MCU FLASH 8KX14 EE A/D 44TQFP |
| PIC16LF877T-04I/PQ | IC MCU FLASH 8KX14 EE A/D 44MQFP |
| PIC16LF877T-04I/L | IC MCU FLASH 8KX14 EE A/D 44PLCC |
| PIC16LF874T-04/PT | IC MCU FLASH 4KX14 EE A/D 44TQFP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PIC16LF872-I/SO | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16LF872-I/SO | 制造商:Microchip Technology Inc 功能描述:IC 8BIT FLASH MCU 16LF872 SOIC28 |
| PIC16LF872-I/SP | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC16LF872-I/SP | 制造商:Microchip Technology Inc 功能描述:IC 8BIT FLASH MCU 16LF872 SDIL28 |
| PIC16LF872-I/SS | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。