PIC18F1230/1330
2009 Microchip Technology Inc.
DS39758D-page 281
TABLE 23-1:
MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
TA +85°C for industrial
-40°C
TA +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
Conditions
Data EEPROM Memory
D120
ED
Byte Endurance
100K
1M
—
E/W -40
C to +85C
D121
VDRW VDD for Read/Write
VMIN
—
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D122
TDEW Erase/Write Cycle Time
3.59
4.10
4.86
ms
D123
TRETD Characteristic Retention
40
—
Year Provided no other
specifications are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(1)
1M
10M
—
E/W -40°C to +85°C
D125
IDDP
Supply Current during
Programming
—10—
mA
Program Flash Memory
D130
EP
Cell Endurance
10K
100K
—
E/W -40
C to +85C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D132B VPEW VDD for Self-Timed Write
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D133A TIW
Self-Timed Write Cycle Time
1.79
2.05
2.43
ms
D134
TRETD Characteristic Retention
40
100
—
Year Provided no other
specifications are violated
D135
IDDP
Supply Current during
Programming
—10—
mA
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
Refer to Section 7.8 for a more detailed discussion on data EEPROM endurance.