參數(shù)資料
型號： PIC18F2221T-I/SS
廠商： Microchip Technology
文件頁數(shù)： 99/110頁
文件大?。?/td> 0K
描述： IC PIC MCU FLASH 2KX16 28SSOP
標準包裝： 2,100
系列： PIC® 18F
核心處理器： PIC
芯體尺寸： 8-位
速度： 40MHz
連通性： I²C，SPI，UART/USART
外圍設備： 欠壓檢測/復位，HLVD，POR，PWM，WDT
輸入/輸出數(shù)： 25
程序存儲器容量： 4KB（2K x 16）
程序存儲器類型： 閃存
EEPROM 大小： 256 x 8
RAM 容量： 512 x 8
電壓 - 電源 (Vcc/Vdd)： 4.2 V ~ 5.5 V
數(shù)據(jù)轉換器： A/D 10x10b
振蕩器型： 內部
工作溫度： -40°C ~ 85°C
封裝/外殼： 28-SSOP（0.209"，5.30mm 寬）
包裝： 帶卷 (TR)
2009 Microchip Technology Inc.
DS39689F-page 89
PIC18F2221/2321/4221/4321 FAMILY
8.0
DATA EEPROM MEMORY
The data EEPROM is a nonvolatile memory array,
separate from the data RAM and program memory, that
is used for long-term storage of program data. It is not
directly mapped in either the register file or program
memory space but is indirectly addressed through the
Special Function Registers (SFRs). The EEPROM is
readable and writable during normal operation over the
entire VDD range.
Four SFRs are used to read and write to the data
EEPROM as well as the program memory. They are:
EECON1
EECON2
EEDATA
EEADR
The data EEPROM allows byte read and write. When
interfacing to the data memory block, EEDATA holds
the 8-bit data for read/write and the EEADR register
holds the address of the EEPROM location being
accessed.
The EEPROM data memory is rated for high erase/write
cycle endurance. A byte write automatically erases the
location and writes the new data (erase-before-write).
The write time is controlled by an on-chip timer. It will
vary with voltage and temperature as well as from chip
to chip. Please refer to parameter D122 (Table 27-1 in
limits.
8.1
EECON1 and EECON2 Registers
Access to the data EEPROM is controlled by two
registers: EECON1 and EECON2. These are the same
registers which control access to the program memory
and are used in a similar manner for the data
EEPROM.
The EECON1 register (Register 8-1) is the control
register for data and program memory access. Control
bit EEPGD determines if the access will be to program
or data EEPROM memory. When clear, operations will
access the data EEPROM memory. When set, program
memory is accessed.
Control bit CFGS determines if the access will be to the
Configuration registers or to program memory/data
EEPROM memory. When set, subsequent operations
access Configuration registers. When CFGS is clear,
the EEPGD bit selects either program Flash or data
EEPROM memory.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set in hardware when the WREN bit is set and cleared
when the internal programming timer expires and the
write operation is complete.
The WR control bit initiates write operations. The bit
cannot be cleared, only set, in software; it is cleared in
hardware at the completion of the write operation.
Control bits, RD and WR, start read and erase/write
operations, respectively. These bits are set by firmware
and cleared by hardware at the completion of the
operation.
The RD bit cannot be set when accessing program
memory (EEPGD = 1). Program memory is read using
table read instructions. See Section 7.1 “Table Reads
and Table Writes” regarding table reads.
The EECON2 register is not a physical register. It is
used exclusively in the memory write and erase
sequences. Reading EECON2 will read all ‘0’s.
Note:
During normal operation, the WRERR bit
is read as ‘1’. This can indicate that a write
operation was prematurely terminated by
a Reset, or a write operation was
attempted improperly.
Note:
The EEIF interrupt flag bit (PIR2<4>) is set
when the write is complete. It must be
cleared in software.
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