Absolute Maximum Ratings
參數(shù)資料
型號： PIC18F6723-I/PT
廠商： Microchip Technology
文件頁數(shù)： 38/60頁
文件大?。?/td> 0K
描述： IC PIC MCU FLASH 64KX16 64TQFP
產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
標(biāo)準(zhǔn)包裝： 160
系列： PIC® 18F
核心處理器： PIC
芯體尺寸： 8-位
速度： 40MHz
連通性： I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復(fù)位，HLVD，POR，PWM，WDT
輸入/輸出數(shù)： 54
程序存儲器容量： 128KB（64K x 16）
程序存儲器類型： 閃存
EEPROM 大小： 1K x 8
RAM 容量： 3.8K x 8
電壓 - 電源 (Vcc/Vdd)： 4.2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 12x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-TQFP
包裝： 托盤
產(chǎn)品目錄頁面： 644 (CN2011-ZH PDF)
配用： MA180020-ND - MODULE PLUG-IN HPC EXPL 18F87J11
XLT64PT5-ND - SOCKET TRAN ICE 64MQFP/TQFP
2009 Microchip Technology Inc.
DS39894B-page 43
PIC18F8723 FAMILY
4.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings()
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD and MCLR) ................................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to VSS (Note 2) ......................................................................................... 0V to +13.25V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of VSS pin ...........................................................................................................................300 mA
Maximum current into VDD pin ..............................................................................................................................250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
...................................................................................................................... ±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
.............................................................................................................. ±20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by all ports .......................................................................................................................200 mA
Maximum current sourced by all ports ..................................................................................................................200 mA
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD –
∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL)
2: Voltage spikes below VSS at the RG5/MCLR/VPP pin, inducing currents greater than 80 mA, may cause
latch-up. Thus, a series resistor of 50-100
Ω should be used when applying a “l(fā)ow” level to the RG5/MCLR/
VPP pin, rather than pulling this pin directly to VSS.
Note: Other than some basic data, this section documents only the PIC18F8723 family’s specifications that differ
from those of the PIC18F8722 family devices. For detailed information on the electrical specifications shared
by the PIC18F8723 family and PIC18F8722 family devices, see the “PIC18F8722 Family Data Sheet”
(DS39646).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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