參數(shù)資料
型號： PIC18F8720T-I/PT
廠商： Microchip Technology
文件頁數(shù)： 149/165頁
文件大?。?/td> 0K
描述： IC MCU FLASH 64KX16 W/AD 80-TQFP
產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
標(biāo)準(zhǔn)包裝： 1,200
系列： PIC® 18F
核心處理器： PIC
芯體尺寸： 8-位
速度： 25MHz
連通性： EBI/EMI，I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復(fù)位，LVD，POR，PWM，WDT
輸入/輸出數(shù)： 68
程序存儲器容量： 128KB（64K x 16）
程序存儲器類型： 閃存
EEPROM 大?。?/td> 1K x 8
RAM 容量： 3.75K x 8
電壓 - 電源 (Vcc/Vdd)： 4.2 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 16x10b
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 80-TQFP
包裝： 帶卷 (TR)
配用： XLT80PT3-ND - SOCKET TRAN ICE 80MQFP/TQFP
AC164320-ND - MODULE SKT MPLAB PM3 80TQFP
AC174011-ND - MODULE SKT PROMATEII 80TQFP
PIC18F6520/8520/6620/8620/6720/8720
DS39609B-page 82
2004 Microchip Technology Inc.
7.5
Write Verify
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
7.6
Protection Against Spurious Write
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared.
Also, the Power-up Timer (72 ms duration) prevents
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch, or software malfunction.
7.7
Operation During Code-Protect
Data EEPROM memory has its own code-protect
mechanism. External read and write operations are
disabled if either of these mechanisms are enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect configuration bit. Refer to Section 23.0
information.
7.8
Using the Data EEPROM
The data EEPROM is a high endurance, byte address-
able array that has been optimized for the storage of
frequently changing information (e.g., program vari-
ables or other data that are updated often). Frequently
changing values will typically be updated more often
than specification D124. If this is not the case, an array
refresh must be performed. For this reason, variables
that change infrequently (such as constants, IDs,
calibration, etc.) should be stored in Flash program
memory.
A simple data EEPROM refresh routine is shown in
EXAMPLE 7-3:
DATA EEPROM REFRESH ROUTINE
Note:
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124.
CLRF
EEADR
; Start at address 0
CLRF
EEADRH
;
BCF
EECON1, CFGS
; Set for memory
BCF
EECON1, EEPGD
; Set for Data EEPROM
BCF
INTCON, GIE
; Disable interrupts
BSF
EECON1, WREN
; Enable writes
Loop
; Loop to refresh array
BSF
EECON1, RD
; Read current address
MOVLW
55h
;
MOVWF
EECON2
; Write 55h
MOVLW
AAh
;
MOVWF
EECON2
; Write AAh
BSF
EECON1, WR
; Set WR bit to begin write
BTFSC
EECON1, WR
; Wait for write to complete
BRA
$-2
INCFSZ
EEADR, F
; Increment address
BRA
Loop
; Not zero, do it again
INCFSZ
EEADRH, F
; Increment the high address
BRA
Loop
; Not zero, do it again
BCF
EECON1, WREN
; Disable writes
BSF
INTCON, GIE
; Enable interrupts
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