E2
參數(shù)資料
型號: PIC18LF8520-I/PT
廠商: Microchip Technology
文件頁數(shù): 63/165頁
文件大?。?/td> 0K
描述: IC MCU FLASH 16KX16 EEPROM80TQFP
產(chǎn)品培訓模塊: Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
標準包裝: 119
系列: PIC® 18F
核心處理器: PIC
芯體尺寸: 8-位
速度: 40MHz
連通性: EBI/EMI,I²C,SPI,UART/USART
外圍設備: 欠壓檢測/復位,LVD,POR,PWM,WDT
輸入/輸出數(shù): 68
程序存儲器容量: 32KB(16K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 1K x 8
RAM 容量: 2K x 8
電壓 - 電源 (Vcc/Vdd): 2 V ~ 5.5 V
數(shù)據(jù)轉換器: A/D 16x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 80-TQFP
包裝: 托盤
產(chǎn)品目錄頁面: 644 (CN2011-ZH PDF)
R01DS0060EJ0100 Rev.1.00
Page 155 of 168
Sep 13, 2011
RX630 Group
5. Electrical Characteristics
5.13
E2 Flash Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (over writing is prohibited).
Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the
range from one to the minimum number.)
Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number.
Table 5.30
E2 Flash Characteristics
Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: Ta = Topr
Item
Symbol
FCLK = 4 MHz
20 MHz
≤ FCLK ≤ 50 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
NPEC 100 hours
2 bytes
tDP2
0.7
6
0.25
2
ms
Programming time
NPEC > 100 hours
2 bytes
tDP2
0.7
6
0.25
2
ms
Erasure time
NPEC 100 hours
32 bytes
tDE32
—4
40
—2
20
ms
Erasure time
NPEC > 100 hours
32 bytes
tDE32
—7
40
—4
20
ms
Blank check time
2 bytes
tDBC2
100
30
μs
Reprogram/erase cycle*1
NDPEC
——
Times
Suspend delay time during programming
tDSPD
250
120
μs
First suspend delay time during erasing
(in suspend priority mode)
tDSESD1
250
120
μs
Second suspend delay time during erasing
(in suspend priority mode)
tDSESD2
500
300
μs
Suspend delay time during erasing
(in erasure priority mode)
tDSEED
500
300
μs
Data hold time*3
tDDRP
10
10
Year
相關PDF資料
PDF描述
PIC18LF458-I/L IC MCU CAN FLASH 16K LP 44-PLCC
VI-J4F-IW-F2 CONVERTER MOD DC/DC 72V 100W
PIC17C43-16/P IC MCU OTP 4KX16 PWM 40DIP
VI-J4F-IW-F1 CONVERTER MOD DC/DC 72V 100W
ORSO82G5-2FN680I IC TRANCEIVERS FPSC 680FPBGA
相關代理商/技術參數(shù)
參數(shù)描述
PIC18LF8520T-I/PT 功能描述:8位微控制器 -MCU 32KB 2048 RAM 68I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC18LF8520T-I/PTG 功能描述:8位微控制器 -MCU 32KB 2048 RAM 68I/O Lead Free Package RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC18LF8525-I/PT 功能描述:8位微控制器 -MCU 48KB 3840 RAM 68I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC18LF8525T-I/PT 功能描述:8位微控制器 -MCU 48KB 3840 RAM 68I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC18LF8527-I/PT 功能描述:8位微控制器 -MCU 48 KB FL 4K RAM 70 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT