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參數(shù)資料
| 型號： | PIIPM15P12D007 |
| 廠商： | International Rectifier |
| 英文描述： | Programmable Isolated IPM |
| 中文描述： | 可編程隔離有害生物綜合治理 |
| 文件頁數(shù)： | 8/25頁 |
| 文件大?。?/td> | 1104K |
| 代理商： | PIIPM15P12D007 |
www.irf.com
8
PIIPM15P12D007
I27179 22 - Sep
Switching Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min
Typ
Max
Units
Test Conditions
Fig.
Q
g
Total Gate Charge (turn on)
84
127
Q
ge
Gate – Emitter Charge (turn on)
10
15
Q
gc
Gate – Collector Charge (turn on)
43
64
nC
I
C
= 15A
V
CC
= 600V
V
GE
= 15V
23
CT1
E
on
Turn on Switching Loss
838
1207
I
C
= 15A, V
CC
= 600V, T
J
= 25 oC
CT4
E
off
Turn off Switching Loss
632
900
V
GE
= 15V, R
G
=10
,
L = 500
μ
H
WF1
E
tot
Total Switching Loss
1470
2107
μ
J
Tail and Diode Rev. Recovery included
WF2
E
on
Turn on Switching Loss
1154
1512
E
off
Turn off Switching Loss
933
1030
E
tot
Total Switching Loss
2087
2542
μ
J
I
C
= 15A, V
CC
= 600V, T
J
= 125 oC
V
GE
= 15V, R
G
=10
,
L = 500
μ
H
Tail and Diode Rev. Recovery included
13,
15
CT4
WF1
WF2
td (on)
Turn on delay time
98
104
14,16
Tr
Rise time
14
25
I
C
= 15A, V
CC
= 600V, T
J
= 125 oC
CT4
td (off)
Turn off delay time
132
142
WF1
Tf
Fall time
226
247
ns
V
GE
= 15V, R
G
=10
,
L = 500
μ
H
WF2
C
ies
Input Capacitance
1323
V
CC
= 30V
C
oes
Output Capacitance
255
V
GE
= 0V
C
res
Reverse Transfer Capacitance
37
pF
f = 1MHz
22
T
J
= 150 oC, I
C
=60A, V
GE
= 15V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC
= 1000V, V
p
= 1200V, R
G
= 5
4
CT2
T
J
= 150 oC, V
GE
= 15V to 0V
CT3
SCSOA
Short Circuit Safe Operating Area
10
μ
s
V
CC
= 1000V, Vp= 1200V, R
G
= 5
WF4
E
REC
Diode reverse recovery energy
711
1263
μ
J
T
J
= 125 oC
Trr
Diode reverse recovery time
113
300
ns
I
F
= 15A, V
CC
= 600V,
Irr
Peak reverse recovery current
36
41
A
V
GE
= 15V, R
G
=10
,
L = 500
μ
H
17,18
19,20
21
CT4
WF3
Rth
J-C_T
Each IGBT to copper plate thermal resistance
0.9
oC/W
Rth
J-C_D
Each Diode to copper plate thermal resistance
1.54
oC/W
25,26
Rth
C-H
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
0.03
oC/W
See also fig. 25, 26
29
I
C
= 2A, V
DC
= 530V, fsw = 8kHz, T
C
= 55 oC
42
I
C
= 3A, V
DC
= 530V, fsw = 8kHz, T
C
= 55 oC
81
I
C
= 3A, V
DC
= 530V, fsw = 16kHz T
C
= 55 oC,
Pdiss
Total Dissipated Power
40
W
I
C
= 7A, V
DC
= 530V, fsw = 4kHz, T
C
= 55oC
PD1
PD2
PD3
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