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參數(shù)資料
| 型號： | PIP3103-T |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N通道|采用SOT - 223 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 59K |
| 代理商： | PIP3103-T |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
PIP3103-T
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL
PARAMETER
Overload protection
I
D
Drain current limiting
CONDITIONS
-40C
≤
T
j
≤
150C
V
IS
= 5 V
V
IS
= 4.5 V
V
IS
= 4 V to 5.5 V
MIN.
TYP.
MAX.
UNIT
0.8
0.7
0.6
1.3
-
-
1.7
-
1.8
A
A
A
Short circuit load protection
V
IS
= 5 V
P
D(TO)
Overload power threshold
for protection to operate
-
17
-
W
T
DSC
Characteristic time
which determines trip time
1
-
1.6
-
ms
Overtemperature protection
Threshold junction temperature V
IS
= 4 V to 5.5 V
from I
D
≥
280 mA or V
DS
≥
100 mV
T
j(TO)
150
165
-
C
SWITCHING CHARACTERISTICS
T
a
= 25C; resistive load R
L
= 50
; adjust V
DD
to obtain I
D
= 250 mA; refer to test circuit and waveforms
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
IS
: 0 V
5 V
-
5
12
μ
s
μ
s
μ
s
μ
s
Rise time
-
11
30
Turn-off delay time
V
IS
: 5 V
0 V
-
25
65
Fall time
-
14
35
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
≤
25 C; V
IS
= 0 V
-
2
A
REVERSE DIODE CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDO
t
rr
Forward voltage
I
S
= 2 A; V
IS
= 0 V; t
p
= 300
μ
s
not applicable
2
-
0.83
1.1
V
Reverse recovery time
-
-
-
-
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ [ P
D
/ P
D(TO)
- 1 ].
2
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 2001
4
Rev 1.000
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| PIP3103-T,115 | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| PIP3104-P | 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT |
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