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參數(shù)資料
| 型號(hào)： | PIP3206-R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 外設(shè)及接口 |
| 英文描述： | TOPFET high side switch SMD version |
| 中文描述： | 21 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 43K |
| 代理商： | PIP3206-R |
Philips Semiconductors
Preliminary specification
TOPFET high side switch
SMD version
PIP3206-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BG
Continuous off-state supply voltage
0
50
V
I
L
P
D
T
stg
T
j
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
1
T
mb
≤
140C
T
mb
≤
25C
-
-
10
115
175
150
A
W
C
C
-55
-
T
sold
Mounting base temperature
during soldering
-
260
C
Reverse battery voltages
2
Continuous reverse voltage
Peak reverse voltage
-V
BG
-V
BG
-
-
16
32
V
V
Application information
External resistors
3
R
I
, R
S
to limit input, status currents
3.2
-
k
Input and status
I
I
, I
S
Continuous currents
-5
5
mA
I
I
, I
S
Repetitive peak currents
δ
≤
0.1, tp = 300
μ
s
-50
50
mA
Inductive load clamping
I
L
= 10 A, V
BG
= 16 V
E
BL
Non-repetitive clamping energy
T
j
= 150C prior to turn-off
-
460
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
4
R
th j-mb
Junction to mounting base
-
-
0.86
1.08
K/W
1
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2
Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3
To limit currents during reverse battery and transient overvoltages (positive or negative).
4
Of the output power MOS transistor.
October 2001
2
Rev 1.000
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