參數(shù)資料
型號(hào): PJ2N9013CT
元件分類(lèi): 小信號(hào)晶體管
英文描述: 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 160K
代理商: PJ2N9013CT
PJ2N9013
NPN Epitaxial Silicon Transistor
1-3
2002/01.rev.A
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS B PUSH-PULL OPERATION
High total power dissipation(PT=625mW)
High collector Current (Ic=500mA)
Complementary to PJ2N9012
Excellent hEF Linearity
Rating
Symbol
Value
Uint
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
5
V
Collector Current
Ic
500
A
Collector Dissipation
Pc
625
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 ~150
°C
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(ON)
IC= 100
A , IE=0
IC= 1mA , IB=0
IE=100
A , IC=0
VCB= 25V , IE = 0
VEB= 3V , IC=0
VEB= 1V, IC =50mA
VEB= 1V, IC =500mA
IC= 500 mA , IB=50mA
IC= 500mA , IB=50mA
VCE =1V, Ic =10mA
40
20
5
64
40
0.6
120
90
0.16
0.91
0.67
100
202
0.6
1.2
0.7
V
nA
V
Device
Operating Temperature
Package
PJ2N9013CT
TO-92
PJ2N9013CX
-20℃~+85℃
SOT-23
Classification
D
E
F
G
H
hEF
64-91
78-112
96-135
112-166
144-202
ABSOLUTE MAXIMUM RATINGS (Ta= 25°°°°C)
ELECTRICAL CHARACTERISTICS
(Ta= 25°°°°C)
hEF CLASSIFICATION
TO-92
SOT-23
Pin : 1. Emitter
2. Base
3. Collector
Pin : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
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