Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
tpgmchk
Program Check execution time
—
45
μs
trdrsrc
Read Resource execution time
—
30
μs
tpgm4
Program Longword execution time
—
65
145
μs
tersblk256k
Erase Flash Block execution time
256 KB program/data flash
—
435
3700
ms
tersscr
Erase Flash Sector execution time
—
14
114
ms
tpgmsec512
tpgmsec1k
tpgmsec2k
Program Section execution time
512 bytes flash
1 KB flash
2 KB flash
—
2.4
4.7
9.3
—
ms
trd1all
Read 1s All Blocks execution time
—
1.8
ms
trdonce
Read Once execution time
—
25
μs
tpgmonce
Program Once execution time
—
65
—
μs
tersall
Erase All Blocks execution time
—
870
7400
ms
tvfykey
Verify Backdoor Access Key execution time
—
30
μs
tswapx01
tswapx02
tswapx04
tswapx08
Swap Control execution time
control code 0x01
control code 0x02
control code 0x04
control code 0x08
—
200
70
—
150
30
μs
tpgmpart64k
tpgmpart256k
Program Partition for EEPROM execution time
256 KB FlexNVM
—
450
—
ms
tsetramff
tsetram32k
tsetram64k
tsetram256k
Set FlexRAM Function execution time:
Control Code 0xFF
32 KB EEPROM backup
64 KB EEPROM backup
256 KB EEPROM backup
—
70
0.8
1.3
4.5
—
1.2
1.9
5.5
μs
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
—
175
260
μs
teewr8b32k
teewr8b64k
teewr8b128k
teewr8b256k
Byte-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
385
475
650
1000
1800
2000
2400
3200
μs
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
Peripheral operating requirements and behaviors
K40 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
34
Freescale Semiconductor, Inc.