參數(shù)資料
型號(hào): PLVA600A
廠商: NXP Semiconductors N.V.
英文描述: Low-voltage avalanche regulator diodes
中文描述: 低壓雪崩穩(wěn)壓二極管
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 43K
代理商: PLVA600A
1999 May 25
2
Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
PLVA600A series
FEATURES
Very low dynamic impedance at
low currents: approximately
1
20
of
conventional series
Hard breakdown knee
Low noise: approximately
1
10
of
conventional series
Total power dissipation:
max. 250 mW
Small tolerances of V
Z
Working voltage range:
nom. 5.0 to 6.8 V
Non-repetitive peak reverse power
dissipation: max. 30 W.
APPLICATIONS
Low current, low power, low noise
applications
CMOS RAM back-up circuits
Voltage stabilizers
Voltage limiters
Smoke detector relays.
DESCRIPTION
High performance voltage regulator
diodes in small SOT23 plastic SMD
packages.
The series consists of PLVA650A to
PLVA668A.
PINNING
PIN
DESCRIPTION
1
2
3
anode
not connected
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM243
2
n.c.
1
3
2
1
3
Top view
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
9A
9B
9C
9D
9E
9F
9G
PLVA650A
PLVA653A
PLVA656A
PLVA659A
PLVA662A
PLVA665A
PLVA668A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed circuit-board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
continuous forward current
repetitive peak working current
non-repetitive peak reverse power dissipation t
p
= 100
μ
s; T
j
= 150
°
C
total power dissipation
storage temperature
junction temperature
250
250
30
250
+150
150
mA
mA
W
mW
°
C
°
C
t
p
= 100
μ
s;
δ
= 10%
T
amb
= 25
°
C; note 1
65
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