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參數(shù)資料
| 型號(hào)： | PM100CVA120 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣包裝 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | PM100CVA120 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
V
CES
±
I
C
±
I
CP
P
C
T
j
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D
= 15V, V
CIN
= 15V
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
(Note-1)
V
A
A
W
°
C
MAXIMUM RATINGS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
600
100
200
356
–
20 ~ +150
Unit
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
FO
I
FO
CONTROL PART
V
mA
20
20
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Symbol
Parameter
Condition
Ratings
Unit
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
W
P
-V
WPC
, U
N
V
N
W
N
-V
NC
Applied between : U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
F
O
-V
NC
Sink current at U
FO
, V
FO
, W
FO
, F
O
terminals
20
20
V
D
V
CIN
V
V
V
N
U
N
W
P
V
WP1
WF
O
V
WPC
V
P
V
VP1
VF
O
V
VPC
U
P
V
UP1
UF
O
V
UPC
NC
NC
N
W
V
U
P
Fo
V
NC
V
N1
W
N
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM100CVA120_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
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| PM100CVA120-2 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:原裝07+最新年份,歡迎來(lái)電咨詢,聯(lián)系13631629729 |
| PM100DHA060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) |
| PM100DHA120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) |
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