參數(shù)資料
型號(hào)： PM100DHA060
英文描述： TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
中文描述： 晶體管| IGBT功率模塊|半橋| 600V的五（巴西）國(guó)際消費(fèi)電子展| 100號(hào)A一（c）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 97K
代理商： PM100DHA060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
V
CES
±
I
C
±
I
CP
P
C
T
j
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D
= 15V, V
CIN
= 15V
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
(Note-1)
V
A
A
W
°
C
MAXIMUM RATINGS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
600
100
200
356
–
20 ~ +150
Unit
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
FO
I
FO
CONTROL PART
V
mA
20
20
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Symbol
Parameter
Condition
Ratings
Unit
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
W
P
-V
WPC
, U
N
V
N
W
N
-V
NC
Applied between : U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
F
O
-V
NC
Sink current at U
FO
, V
FO
, W
FO
, F
O
terminals
20
20
V
D
V
CIN
V
V
V
N
U
N
W
P
V
WP1
WF
O
V
WPC
V
P
V
VP1
VF
O
V
VPC
U
P
V
UP1
UF
O
V
UPC
NC
NC
N
W
V
U
P
Fo
V
NC
V
N1
W
N
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd In
Fo Vcc
Gnd
Si Out
OT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM100DHA120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
PM100DSA120 功能描述:MOD IPM DUAL 1200V 100A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PM100DSA120_00 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM100-G 制造商:Extech Instruments Corporation 功能描述:
PM100RL1A060 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 100A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 100A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):100A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR
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