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參數(shù)資料
| 型號(hào)： | PM100DSA120 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | USING INTELLIGENT POWER MODULES |
| 中文描述： | 用智能功率模塊 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 97K |
| 代理商： | PM100DSA120 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
400
500
–
20 ~ +100
–
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc (base plate) measurement point is below.
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
1
10
Min.
—
—
—
0.5
—
—
—
—
—
—
Typ.
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
—
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
–
I
C
= 100A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 300V, I
C
= 100A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 100A
V
CIN
= 0V, Pulsed
(Fig. 1)
TOTAL SYSTEM
V
mA
V
μ
s
Unit
0.27*
0.43*
0.35
0.56
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Case to fin, (per 1 module)
Thermal grease applied
(Note-2)
(Note-2)
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
UP
IGBT
28.3
–
8.5
VP
WP
UN
VN
WN
FWDi
28.0
1.7
IGBT
65.0
–
8.5
FWDi
65.2
1.7
IGBT
87.0
–
8.5
FWDi
87.2
1.7
IGBT
39.3
6.5
FWDi
39.5
–
5.2
IGBT
54.0
6.5
FWDi
53.7
–
5.2
IGBT
76.0
6.5
FWDi
75.7
–
5.2
arm
axis
X
Y
Bottom view
Top view
Tc
B
N
P
U
V
W
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-2) Tc (under the chip) measurement point is below.
(unit : mm)
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| PM100DSA120_00 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
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| PM100RL1A060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 100A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 100A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):100A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR |
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| PM100RL1B060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 100A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 100A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):100A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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