參數(shù)資料
型號: PM100RLB060
廠商: Mitsubishi Electric Corporation
英文描述: FLAT-BASE TYPE INSULATED PACKAGE
中文描述: 平性基地型絕緣包裝
文件頁數(shù): 3/6頁
文件大?。?/td> 97K
代理商: PM100RLB060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
400
500
20 ~ +100
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc (base plate) measurement point is below.
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
1
10
Min.
0.5
Typ.
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
I
C
= 100A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 300V, I
C
= 100A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 100A
V
CIN
= 0V, Pulsed
(Fig. 1)
TOTAL SYSTEM
V
mA
V
μ
s
Unit
0.27*
0.43*
0.35
0.56
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Case to fin, (per 1 module)
Thermal grease applied
(Note-2)
(Note-2)
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
UP
IGBT
28.3
8.5
VP
WP
UN
VN
WN
FWDi
28.0
1.7
IGBT
65.0
8.5
FWDi
65.2
1.7
IGBT
87.0
8.5
FWDi
87.2
1.7
IGBT
39.3
6.5
FWDi
39.5
5.2
IGBT
54.0
6.5
FWDi
53.7
5.2
IGBT
76.0
6.5
FWDi
75.7
5.2
arm
axis
X
Y
Bottom view
Top view
Tc
B
N
P
U
V
W
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-2) Tc (under the chip) measurement point is below.
(unit : mm)
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