參數(shù)資料
型號(hào)： PM150DHA060
英文描述： TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 150A I(C)
中文描述： 晶體管| IGBT功率模塊|半橋| 600V的五（巴西）國際消費(fèi)電子展| 150A一（c）
文件頁數(shù)： 5/6頁
文件大?。?/td> 136K
代理商： PM150DHA060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (V
D
), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing
“
OC
”
and
“
SC
”
tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above V
CES
rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
10%
90%
trr
Irr
tr
td (on)
tc (on)
tc (off)
td (off)
V
CIN
Ic
V
CE
10%
10%
10%
90%
tf
(ton= td (on) + tr)
(toff= td (off) + tf)
V
D
(all)
U,V,W, (N)
P, (U,V,W,B)
A
Pulse
V
CE
V
CIN
(15V)
V
D
(all)
U,V,W, (N)
P, (U,V,W,B)
V
CIN
V
CC
I
C
I
C
I
C
OC
SC
V
CIN
t
off (OC)
U,V,W
N
V
CINN
V
CINP
V
D
V
D
P
Ic
Vcc
V
CINN
0V
0V
V
CINP
t
t
t
dead
t
dead
t
dead
P, (U,V,W,B)
U,V,W, (N)
U,V,W,B, (N)
V
D
(all)
Fig. 1 V
CE(sat)
Test
IN
(Fo)
Fo
IN
(Fo)
V
D
(all)
Fig. 2 V
EC
, (V
FM
) Test
CIN
(0V)
Ic
V
V
P, (U,V,W)
V
CIN
(15V)
–
Ic
P
N
N
C
S
C
S
U,V,W
Vcc
Vcc
Ic
Ic
V
D
(all)
V
D
(all)
Fig. 3 Switching time Test circuit and waveform
P
U,V,W
V
CIN
V
CIN
V
CIN
(
15V
)
V
CIN
(
15V
)
Fo
IN
(Fo)
IN
(Fo)
Short Circuit Current
Over Current
Constant Current
Constant Current
Fig. 7 Dead time measurement point example
a) Lower Arm Switching
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Signal input
(Upper Arm)
Signal input
(Lower Arm)
b) Upper Arm Switching
Fig. 4 I
CES
Test
Fig. 5 OC and SC Test
Fig. 6 OC and SC Test waveform
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM150DHA120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 150A I(C)
PM150DSA120 功能描述:MOD IPM DUAL 1200V 150A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PM150DSA120_00 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
PM150RL1A060 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 150A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 150A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):150A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR
PM150RL1A120 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 150A 1200V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 150A, 1.2KV, MODULE, IPM Power Device:IGBT, Current Rating (Ic / Id):150A, Isolation Voltage:2.5kV, IPM Series:Intellimod L1 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR
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