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參數(shù)資料
| 型號： | PM200CSE060 |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 400 A, UFM22 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | PM200CSE060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
Parameter
Symbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
TC
Tstg
Viso
Ratings
VCC(PROT)
400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125
°C Start
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
TOTAL SYSTEM
Tc
63mm
U
PN
B
VW
2.3
3.3
2.0
0.3
1.0
2.9
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 200A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Test Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
0.4
—
1.7
2.2
0.8
0.15
0.4
2.0
0.6
—
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 15V
0V
VCC = 300V, IC = 200A
Tj = 125
°C
Inductive Load (upper and lower arm)
(Fig. 3)
VCE = VCES, VCIN = 15V
(Fig. 4)
VD = 15V, IC = 200A
VCIN = 0V, Pulsed
(Fig. 1)
V
mA
V
s
Unit
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Case to fin, Thermal grease applied (per 1 module)
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
0.21
0.35
0.13
0.21
0.018
—
Limits
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM200CSE060_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM200CVA060 | 功能描述:MOD IPM 6PAC 600V 200A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM200CVA060_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
| PM200DHA060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) |
| PM200DHA120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) |
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