參數(shù)資料
型號(hào): PMEGXX05ET
廠商: NXP Semiconductors N.V.
英文描述: 0.5 A VERY LOW V-f MEGA SCHOTTKY BARRIER RECTIFIERS IN SOT23 PACKAGE
中文描述: 0.5一個(gè)非常低的室顫M(mǎn)EGA肖特基屏障SOT23封裝整流器
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 68K
代理商: PMEGXX05ET
9397 750 15183
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 July 2005
3 of 12
Philips Semiconductors
PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in SOT23 package
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 5:
Type number
PMEG2005ET
PMEG3005ET
PMEG4005ET
Marking codes
Marking code
[1]
P3*
P4*
P5*
Table 6:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
reverse voltage
PMEG2005ET
PMEG3005ET
PMEG4005ET
I
F
forward current
I
FRM
repetitive peak forward current
I
FSM
non-repetitive peak forward
current
P
tot
total power dissipation
Limiting values
Conditions
Min
Max
Unit
-
-
-
-
-
20
30
40
0.5
3.9
10
V
V
V
A
A
A
t
p
1 ms;
δ ≤
0.5
t
p
= 8 ms square
wave
T
amb
25
°
C
[1]
-
[1]
-
280
420
150
+150
+150
mW
mW
°
C
°
C
°
C
[2]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min
Typ
-
-
Max
440
300
Unit
K/W
K/W
[1] [2]
-
[1] [3]
-
相關(guān)PDF資料
PDF描述
PMEGXX10BEA 1 A very low VF MEGA Schottky barrier rectifier
PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier
PMEGXX10EH 1 A very low VF MEGA Schottky barrier rectifiers
PMEGXX10EJ 1 A very low VF MEGA Schottky barrier rectifiers
PMEM4010PD PNP transistor/Schottky diode module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PMEGXX10BEA 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:1 A very low VF MEGA Schottky barrier rectifier
PMEGXX10BEV 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:1 A very low VF MEGA Schottky barrier rectifier
PMEGXX10EH 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:1 A very low VF MEGA Schottky barrier rectifiers
PMEGXX10EJ 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:1 A very low VF MEGA Schottky barrier rectifiers
PMEH2010AEH 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Low VCEsat (BISS) transistors