參數(shù)資料
型號(hào)： PMEGXX10EJ
廠商： NXP Semiconductors N.V.
英文描述： 1 A very low VF MEGA Schottky barrier rectifiers
中文描述： 1安很低正向壓降MEGA肖特基勢(shì)壘整流器
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 85K
代理商： PMEGXX10EJ
2004 Jun 14
4
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
Notes
1.
2.
Refer to SOD323 (SC-76) standard mounting conditions.
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 printed-circuit board with copper clad 10
×
10 mm.
Solder point of cathode tab.
Refer to SOT666 standard mounting conditions.
Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3.
4.
5.
6.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
PMEGXX10BEA (SOD323)
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
450
210
90
K/W
K/W
K/W
R
th(j-s)
thermal resistance from junction to
soldering point
PMEGXX10BEV (SOT666)
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 2 and 5
in free air; notes 2 and 6
note 4
405
215
80
K/W
K/W
K/W
R
th(j-s)
thermal resistance from junction to
soldering point
SYMBOL
PARAMETER
CONDITIONS
PMEG2010BEA/
PMEG2010BEV
PMEG3010BEA/
PMEG3010BEV
PMEG4010BEA/
PMEG4010BEV
UNIT
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
V
R
= 10 V; note 1
V
R
= 20 V; note 1
V
R
= 30 V; note 1
V
R
= 40 V; note 1
V
R
= 1 V; f = 1 MHz
90
150
210
280
355
420
15
40
66
130
190
240
330
390
500
40
200
80
90
150
215
285
380
450
12
40
55
130
200
250
340
430
560
30
150
70
95
155
220
295
420
540
7
30
43
130
210
270
350
470
640
20
100
50
mV
mV
mV
mV
mV
mV
μ
A
μ
A
μ
A
μ
A
pF
I
R
continuousreverse
current
C
d
diode capacitance
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