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參數資料
| 型號： | PN121ST |
| 英文描述： | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 10M | DOME-3.0 |
| 中文描述： | 光電晶體管|叩| 800NM峰值波長| 1000萬|穹頂- 3.0 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 344K |
| 代理商： | PN121ST |
1
PNZ121S
(PN121S)
Silicon NPN Phototransistor
For optical control systems
Features
Stable operations in high illuminance region
Low dark current
Fast response : t
r
= 1
μ
s (typ.)
Small size ( 3) ceramic package
Phototransistors
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
10
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)*3
λ
P
θ
t
r*2
t
f*2
Conditions
min
typ
1
max
100
280
Unit
nA
μ
A
nm
deg.
μ
s
μ
s
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
V
CE
= 10V
V
CE
= 10V, L = 1000 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
120
800
30
1
1.3
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
3.0
±
0.2
0.45
±
0.05
0.3
±
0.05
0.9
±
0.15
4
±
0
2
±
0
1
1
2
Unit : mm
1: Emitter
2: Collector
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
*3
I
CE(L)
Classifications
Class
I
CE(L)
(
μ
A)
Color indication
Q
R
S
T
120 to180
160 to 200
180 to 235
210 to 280
Black
Red
Green
—
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
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