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參數(shù)資料
| 型號(hào)： | PN3638 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP General Purpose Amplifier(PNP通用放大器) |
| 中文描述： | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | PN3638 |
P
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CES
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CES
Collector-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
25
V
I
C
= 100
μ
A, I
B
= 0
25
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 15 V, I
E
= 0
V
CE
= 15 V, I
E
= 0, T
A
= 65
°
C
25
4.0
V
V
nA
μ
A
35
2.0
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 50 mA
PN3638
PN3638A
V
CE
= 2.0 V, I
C
= 300 mA
PN3638
PN3638A
V
CE
= 10 V, I
C
= 100 mA
PN3638
PN3638A
V
CE
= 10 V, I
C
= 1.0 mA
PN3638A
30
100
30
20
20
80
100
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 2.5 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 50 mA, I
B
= 2.5 mA
I
C
= 300 mA, I
B
= 30 mA
0.25
1.0
1.1
2.0
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.8
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
PN3638
PN3638A
20
10
pF
pF
C
ib
Input Capacitance
V
BE
= 0.5 V, f = 1.0 MHz
PN3638
PN3638A
65
25
pF
pF
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 3.0 V,
f = 100 MHz
PN3638
PN3638A
I
= 10 mA, V
CE
= 10 V,
f = 1.0 kHz
PN3638
PN3638A
1.0
1.5
25
100
h
ie
h
oe
h
re
Input Impedance
Output Admittance
Voltage Feedback Ratio
I
C
= 10 mA, V
CE
= 10 V,
f = 1.0 kHz
2.0
1.2
26
15
k
μ
mhos
x10
-4
x10
-4
PN3638
PN3638A
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
t
on
t
d
t
r
t
off
t
s
t
f
V
CC
= 10 V, I
C
= 300 mA,
I
B1
= 30 mA
75
20
70
170
140
70
ns
ns
ns
ns
ns
ns
V
CC
= 10 V, I
C
= 300 mA
I
B1
= I
B2
= 30 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PN3638_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| PN3638_J05Z | 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN3638_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN3638A | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN3638A LEADFREE | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS sistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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