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參數(shù)資料
| 型號： | PN930 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | PN930 |
P
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEO
Collector Cutoff Current
I
CBO
Collector Cutoff Current
I
CES
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10 nA, I
C
= 0
V
CE
= 5.0 V
V
CB
= 45 V, I
E
= 0
V
CE
= 45 V, I
E
= 0
V
CE
= 45 V, I
E
= 0, T
A
= 170
°
C
V
EB
= 5.0 V, I
C
= 0
45
45
5.0
V
V
V
nA
nA
nA
μ
A
nA
2.0
10
10
10
10
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 10
μ
A
V
CE
= 5.0 V, I
C
= 10
μ
A,
T =
55
°
C
V
CE
= 5.0 V, I
C
= 500
μ
A
V
CE
= 5.0 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 10 mA, I
B
= 0.5 mA
100
20
150
300
600
1.0
1.0
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
0.6
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 5.0 V, f = 1.0 MHz
I
C
= 500
μ
A, V
CE
= 5.0 V,
f = 20 MHz
I
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
8.0
pF
1.5
150
25
600
32
600
1.0
3.0
h
ib
h
rb
h
ob
NF
Input Impedance
Voltage Feedback Ratio
Output Admittance
Noise Figure
x10
6
μ
mho
dB
V
CE
= 5.0 V, I
C
= 10
μ
A,
R
g
= 10 k
, B
W
= 15.7 kHz
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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