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參數(shù)資料
| 型號： | PNA2602(PN205) |
| 英文描述： | PNA2602 (PN205) - Darlington Phototransistor |
| 中文描述： | PNA2602（PN205） -達(dá)林頓光電晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | PNA2602(PN205) |
1
PNA2601M
Silicon NPN
Phototransistor
For optical control systems
Darlington
Phototransistor
s
50
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Unit : mm
1: Collector
2: Emitter
2.6
±
0.2
2-0.45
±
0.15
0.15
1
0
0
0
2
2
±
0
1
±
1
2.0
1
2
1.2
±
0.2
(0.4)
0.8
1.45
±
0.2
C 0.5
2-0.7
G
Gate the rest
R0.55
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
35
6
30
75
–25 to +65
–30 to +85
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.1
max
0.5
Unit
μ
A
μ
A
nm
deg.
μ
s
V
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, H = 3.75
μ
W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100
I
C
= 100
μ
A, H = 3.75
μ
W/cm
2
20
850
35
150
0.7
1.5
*1
Measurements were made using infrared light (
λ
= 940 nm) as a light source.
*2
Switching time measuring circuit
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
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| PNA2803MQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | DARLINGTON | 850NM PEAK WAVELENGTH | 30M | LED-2B |
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