參數(shù)資料
型號(hào): PNZ109L(PN109L)
英文描述: PNZ109L (PN109L) - Silicon NPN Phototransistor
中文描述: PNZ109L(PN109L) -硅npn型光電晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 343K
代理商: PNZ109L(PN109L)
1
Phototransistors
PNZ107F, PNZ108F
(PN107F, PN108F)
Silicon NPN Phototransistors
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO*
V
ECO
V
EBO*
I
C
P
C
T
opr
T
stg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
*
PNZ108F only
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : t
r
= 8
μ
s (typ.)
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
For optical control systems
1: Emitter
2: Collector
Unit : mm
4.6
±
0.15
Glass window
2.54
±
0.25
10
±
02
10
±
015
5.75 max.
2-0.45
±
0.05
4
±
0
1
4
±
3
1
2
PNZ107F
1: Emitter
2: Base
3: Collector
Unit : mm
4.6
±
0.15
Glass window
2.54
±
0.25
10
±
02
10
±
015
5.75 max.
3-0.45
±
0.05
4
±
0
1
4
±
3
1
3
2
PNZ108F
Note) The part numbers in the parenthesis show conventional part number.
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