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| 型號(hào)： | PPBSS8110Y |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 100 V, 1 A NPN low VCEsat (BISS) transistor |
| 中文描述： | 100伏，1安NPN型低飽和壓降（BISS）晶體管 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 107K |
| 代理商： | PPBSS8110Y |
9397 750 12567
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 2 June 2004
3 of 13
Philips Semiconductors
PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
2
collector mounting
pad.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm
2
collector mounting
pad.
6.
Thermal characteristics
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
2
collector mounting
pad.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm
2
collector mounting
pad.
T
j
T
amb
junction temperature
operating ambient
temperature
storage temperature
-
65
150
+150
°
C
°
C
T
stg
65
+150
°
C
(1) 1 cm
2
collector mounting pad.
(2) Standard footprint.
Fig 1.
Power derating curves.
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
T
amb
(
°
C)
0
160
120
40
80
001aaa796
200
400
600
P
tot
(mW)
0
(1)
(2)
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Typ
Unit
K/W
K/W
K/W
K/W
[1]
431
[2]
260
[3]
200
R
th(j-s)
thermal resistance from junction
to soldering point
in free air
[1]
85
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