華晶
CS6N70A3D-G
TO-251
CC/恒流
絕緣柵型場效應(yīng)管
N溝道
增強(qiáng)型
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SilICon N-Channel Power MOSFET
CS6N70A3D-G
○R Huajing Discrete Devices
General Description:
CS6N70A3D-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for systemminiaturization and higher efficiency.
The package form is TO-251, which accords with the
RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:15.5nC)
l Low Reverse transfer capacitances(Typical:6pF)
l 100%Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger
總 機(jī):O512-5O71O709
傳 真:O512-5O1112O9
工廠專線:1595O933O5O
貿(mào)易專線:13914994568
Q Q:41086900
E-Mail:master@ksmcu.com
電話:15950933050/13914994568
聯(lián)系人:韋文林 (先生)
QQ:
郵箱:master@ksmcu.com
地址:昆山市利都路258號
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