IXYS
IXFN32N60
其他
N溝道
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IXFN32N60詳細參數(shù) |
制造商: | IXYS |
Id-連續(xù)漏極電流: | 32 A |
Vds-漏源極擊穿電壓: | 600 V |
Rds On-漏源導通電阻: | 250 mOhms |
晶體管極性: | N-Channel |
Vgs-柵源極擊穿電壓 : | 20 V |
最大工作溫度: | + 150 C |
Pd-功率耗散: | 520 W |
安裝風格: | 底座螺絲安裝 |
配置: | Single Dual Source |
下降時間: | 60 ns |
最小工作溫度: | - 55 C |
上升時間: | 45 ns |
典型關閉延遲時間: | 100 ns |
典型接通延遲時間: | 30 ns |
包裝數(shù)量: | 10pcs |
IXFN32N60模塊當UGS大于UT(開啟電壓或閾值電壓)時,柵極下P區(qū)表面的電子濃度將超過空穴濃度,使P型半導體反型成N型而成為反型層,該反型層形成N溝道而使PN結J1消失,漏極和源極導電。 |
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VI-J51-C2 |
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VIJ60CW |
VI-J60-CW |
VI-J60-CX |
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VI-J62-CX |
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VI-J6L-IZ3 |
VI-J6L-MW |
VI-J6M-IX |
VIJ6NEW |
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VI-JN1-CX |
VI-JN1-CY |
VI-JN1-CY-01 |
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VI-JN1-EX |
VI-JN1-EY-09 |
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VI-JN3-CZ-01 |
VI-JN4-CY |
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VI-JWI-IY |
VI-JWJ-CX |
VI-JWJ-CY |
VI-JWL-CY |
VI-JWL-IV |
VI-JWL-IX |
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VI-JWO-CX |
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