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參數(shù)資料
| 型號： | PS21212 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | TRANSFER-MOLD TYPE INSULATED TYPE |
| 中文描述： | 轉(zhuǎn)讓模具類型絕緣型 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 183K |
| 代理商： | PS21212 |
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21212
TRANSFER-MOLD TYPE
INSULATED TYPE
Aug. 1999
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT
Z
Drive circuit
C
C
C
C
C
C
(15V line)
(Note 1, 2)
V
D
V
NC
V
NC
W
AC line input
AC line output
V
U
Input signal
Level shifter
Drive circuit
Protection
circuit (UV)
Input signal
Input signal
Input signal conditioning
Fo logic
Prcircuit
Protection
circuit (UV)
Protection
circuit (UV)
Cprotection
Drive circuit Drive circuit
F
O
CFO
P
N
1
N
Fault output (5V line)
(Note 3, 5)
High-side input (PWM)
(5V line)
Note 1,2)
(5V line)
M
(Note 6)
Bootstrap circuit
For detailed description
of the boot-strap circuit
construction, please
contact Mitsubishi
Electric
DIP-IPM
C
Z : ZNR (Surge absorber)
C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line-to line
surge absorber circuit may become necessary
depending on the application environment).
C4
C3
C3 : Tight tolerance, temp-compensated electrolytic type
(Note : The capacitance value depends on the PWM control
scheme used in the applied system).
C4 : 0.22~2
μ
F R-category ceramic capacitor for noise filtering.
Note1:
To prevent the input signals oscillation, an RC coupling at each input is recommended. (see also Fig. 7)
2:
By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer
isolation is possible. (see also Fig. 7)
3:
This output is open collector type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 5.1k
resistance.
(see also Fig. 7)
4:
The wiring between the power DC link capacitor and the P/N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high
surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22
μ
F, high voltage type) is recommended to be mounted close to
these P and N1 DC power input pins.
5:
Fo output pulse width should be decided by putting external capacitor between CFO and V
NC
terminals. (Example : CFO=22nF
6:
High voltage diodes (600V or more) should be used in the bootstrap circuit.
t
FO
=1.8ms (Typ.))
H-side IGBT
S
L-side IGBT
S
CIN
(Note 4)
Fig. 3
Inrush current
limiter circuit
Level shifter Level shifter
Note1:
In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0
μ
s.
2:
To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Drive circuit
Drive circuit
Protection circuit
W
V
U
B
C
V
NC
CIN
A
P
N1
N
CR
Shunt Resistor
External protection circuit
DIP-IPM
L-side IGBT
S
H-side IGBT
S
SC Protection
Trip Level
I
C
(A)
t
w
(
μ
s)
2
0
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
Collector current
waveform
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