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| 型號： | PSD412A2-20U |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package; Similar to IRHY57230CM with optional Total Dose Rating of 1000kRads |
| 中文描述： | 現(xiàn)場可編程外圍 |
| 文件頁數(shù)： | 105/123頁 |
| 文件大?。?/td> | 657K |
| 代理商： | PSD412A2-20U |
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PSD4XX Famly
102
Symbol
Parameter
14
Conditions Typical
15
Max Unit
C
IN
C
OUT
C
VPP
Capacitance (for input pins only)
V
IN
= 0 V
V
OUT
= 0 V
V
PP
= 0 V
4
6
pF
Capacitance (for input/output pins)
8
12
pF
Capacitance (for WR/V
PP
or R/W/V
PP
)
18
25
pF
NOTES:
14.These parameters are only sampled and are not 100% tested.
15.Typical values are for T
A
= 25°C and nominal supply voltages.
T
A
= 25 °C, f = 1 MHz
15.0
Pin Capacitance
16.0
AC Testing
Figure 51. AC Testing Load Circuit
17.0
Erasure and
Programmng
3.0V
0V
TEST POINT
1.5V
DEVICE
UNDER TEST
2.01 V
195
C
L
= 30 pF
(INCLUDING
SCOPE AND JIG
CAPACITANCE)
To clear all locations of their programmed contents, expose the window packaged device
to an ultra-violet light source. A dosage of 30 W second/cm
2
is required (40 W second/cm
2
for ZPSD4XXV versions). This dosage can be obtained with exposure to a wavelength of
2537 and intensity of 12000 μW/cm
2
for 40 to 45 minutes (55 to 60 minutes for
ZPSD4XXV versions). The device should be about 1 inch from the source, and all filters
should be removed from the UV light source prior to erasure.
The PSD4XX and similar devices will erase with light sources having wavelengths shorter
than 4000 . Although the erasure times will be much longer than with UV sources at 2537
, exposure to fluorescent light and sunlight eventually erases the device. For maximum
system reliability, these sources should be avoided. If used in such an environment, the
package windows should be covered by an opaque substance.
Upon delivery from
ST
, or after each erasure, the PSD4XX device has all bits in the PAD
and EPROM in the “1” or high state. The configuration bits are in the “0” or low state. The
code, configuration, and PAD MAP data are loaded through the procedure of programming
Information for programming the device is available directly from
ST
. Please contact your
local sales representative.
Figure 50. AC Testing Input/Output Waveform
相關PDF資料 |
PDF描述 |
|---|---|
| PSD412A2-20UI | Field-Programmable Peripheral |
| PSD412A2-70J | Field-Programmable Peripheral |
| PSD412A2-70U | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9230 with Standard Packaging |
| PSD412A2-90J | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package; A IRHM57260SE with Standard Packaging |
| PSD412A2-90U | 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHLF77110 with optional total dose of 300kRads |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PSD412A2-20UI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral |
| PSD412A2-70J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral |
| PSD412A2-70U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral |
| PSD412A2-90J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral |
| PSD412A2-90U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field-Programmable Peripheral |
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