參數(shù)資料
型號: PSD814F3V-20
廠商: 意法半導(dǎo)體
英文描述: Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V
中文描述: Flash在系統(tǒng)可編程(ISP)的周邊8位MCU,5V的
文件頁數(shù): 79/110頁
文件大?。?/td> 1737K
代理商: PSD814F3V-20
79/110
PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
Table 46. DC Characteristics (3V devices)
Note: 1. Reset (RESET) has hysteresis. V
IL1
is valid at or below 0.2V
CC
–0.1. V
IH1
is valid at or above 0.8V
CC
.
2. CSI deselected or internal PD is active.
3. PLD is in non-Turbo mode, and none of the inputs are switching.
4. Please see
Figure 36., page 72
for the PLD current calculation.
5. I
OUT
= 0mA
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
IH
High Level Input Voltage
3.0 V < V
CC
< 3.6 V
0.7V
CC
V
CC
+0.5
V
V
IL
Low Level Input Voltage
3.0 V < V
CC
< 3.6 V
–0.5
0.8
V
V
IH1
Reset High Level Input Voltage
(Note
1
)
0.8V
CC
V
CC
+0.5
V
V
IL1
Reset Low Level Input Voltage
(Note
1
)
–0.5
0.2V
CC
–0.1
V
V
HYS
Reset Pin Hysteresis
0.3
V
V
LKO
V
CC
(min) for Flash Erase and
Program
1.5
2.2
V
V
OL
Output Low Voltage
I
OL
= 20μA, V
CC
= 3.0 V
0.01
0.1
V
I
OL
= 4mA, V
CC
= 3.0 V
0.15
0.45
V
V
OH
Output High Voltage Except
V
STBY
On
I
OH
= –20μA, V
CC
= 3.0 V
2.9
2.99
V
I
OH
= –1mA, V
CC
= 3.0 V
2.7
2.8
V
V
OH1
Output High Voltage V
STBY
On
I
OH1
= 1μA
V
STBY
– 0.8
V
V
STBY
SRAM Stand-by Voltage
2.0
V
CC
V
I
STBY
SRAM Stand-by Current
V
CC
= 0 V
0.5
1
μA
I
IDLE
Idle Current (V
STBY
input)
V
CC
> V
STBY
–0.1
0.1
μA
V
DF
SRAM Data Retention Voltage
Only on V
STBY
2
V
I
SB
Stand-by Supply Current
for Power-down Mode
CSI >V
CC
–0.3 V (Notes
2,3
)
25
100
μA
I
LI
Input Leakage Current
V
SS
< V
IN
< V
CC
–1
±0.1
1
μA
I
LO
Output Leakage Current
0.45 < V
IN
< V
CC
–10
±5
10
μA
I
CC
(DC)
(Note
5
)
Operating
Supply
Current
PLD Only
PLD_TURBO = Off,
f = 0 MHz (Note
3
)
0
μA/PT
PLD_TURBO = On,
f = 0 MHz
200
400
μA/PT
Flash memory
During Flash memory
WRITE/Erase Only
10
25
mA
Read only, f = 0 MHz
0
0
mA
SRAM
f = 0 MHz
0
0
mA
I
CC
(AC)
(Note
5
)
PLD AC Adder
note
4
Flash memory AC Adder
1.5
2.0
mA/
MHz
SRAM AC Adder
0.8
1.5
mA/
MHz
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