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參數(shù)資料
| 型號： | PSD835G2-A-12JI |
| 廠商： | 意法半導體 |
| 英文描述： | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| 中文描述： | 在8片位微控制器可配置存儲系統(tǒng) |
| 文件頁數(shù)： | 22/110頁 |
| 文件大?。?/td> | 570K |
| 代理商： | PSD835G2-A-12JI |
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PSD835G2
PSD8XX Family
21
The
PSD835G2
Functional
Blocks
(cont.)
9.1.1.6.5 Data Polling Flag DQ7
When Erasing or Programming the Flash memory bit DQ7 outputs the complement of the
bit being entered for Programming/Writing on DQ7. Once the Program instruction or the
Write operation is completed, the true logic value is read on DQ7 (in a Read operation).
Flash memory specific features:
J
Data Polling is effective after the fourth Write pulse (for programming) or after the
sixth Write pulse (for Erase). It must be performed at the address being programmed
or at an address within the Flash sector being erased.
J
During an Erase instruction, DQ7 outputs a
‘
0
’
. After completion of the instruction,
DQ7 will output the last bit programmed (it is a
‘
1
’
after erasing).
J
If the location to be programmed is in a protected Flash sector, the instruction is
ignored.
J
If all the Flash sectors to be erased are protected, DQ7 will be set to
‘
0
’
for
about 100 μs, and then return to the previous addressed location. No erasure will be
performed.
9.1.1.6.6 Toggle Flag DQ6
The PSD835G2 offers another way for determining when the Flash memory Program
instruction is completed. During the internal Write operation and when either the FSi or
CSBOOTi is true, the DQ6 will toggle from
‘
0
’
to
‘
1
’
and
‘
1
’
to
‘
0
’
on subsequent attempts to
read any byte of the memory.
When the internal cycle is complete, the toggling will stop and the data read on the
Data Bus D0-7 is the addressed memory location. The device is now accessible for a new
Read or Write operation. The operation is finished when two successive reads yield the
same output data. Flash memory specific features:
J
The Toggle bit is effective after the fourth Write pulse (for programming) or after the
sixth Write pulse (for Erase).
J
If the location to be programmed belongs to a protected Flash sector, the instruction
is ignored.
J
If all the Flash sectors selected for erasure are protected, DQ6 will toggle to
‘
0
’
for
about 100 μs and then return to the previous addressed location.
9.1.1.6.7 Error Flag DQ5
During a correct Program or Erase, the Error bit will set to
‘
0
’
. This bit is set to
‘
1
’
when
there is a failure during Flash programming, Sector erase, or Bulk Erase.
In the case of Flash programming, the Error Bit indicates the attempt to program a Flash
bit(s) from the programmed state (0) to the erased state (1), which is not a valid operation.
The Error bit may also indicate a timeout condition while attempting to program a byte.
In case of an error in Flash sector erase or byte program, the Flash sector in which the
error occurred or to which the programmed location belongs must no longer be used.
Other Flash sectors may still be used. The Error bit resets after the Reset instruction.
9.1.1.6.8 Erase Time-out Flag DQ3
The Erase Timer bit reflects the time-out period allowed between two consecutive Sector
Erase instructions. The Erase timer bit is set to
‘
0
’
after a Sector Erase instruction for a
time period of 100 μs + 20% unless an additional Sector Erase instruction is decoded.
After this time period or when the additional Sector Erase instruction is decoded, DQ3 is
set to
‘
1
’
.
相關PDF資料 |
PDF描述 |
|---|---|
| PSD835G2-A-12M | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G2-A-12MI | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G2-A-12U | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G2-A-12UI | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G2-A-15B81 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PSD835G2V-12UI | 功能描述:靜態(tài)隨機存取存儲器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-90U | 功能描述:靜態(tài)隨機存取存儲器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD853F2-70J | 功能描述:SPLD - 簡單可編程邏輯器件 5.0V 1M 70ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24 |
| PSD853F2-70M | 功能描述:CPLD - 復雜可編程邏輯器件 5.0V 1M 70ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100 |
| PSD853F2-90J | 功能描述:CPLD - 復雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100 |
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