• 參數(shù)資料
    型號(hào): PSD935G3-15B81I
    廠商: 意法半導(dǎo)體
    英文描述: Configurable Memory System on a Chip for 8-Bit Microcontrollers
    中文描述: 在8片位微控制器可配置存儲(chǔ)系統(tǒng)
    文件頁(yè)數(shù): 25/91頁(yè)
    文件大?。?/td> 488K
    代理商: PSD935G3-15B81I
    PSD9XX Family
    PSD935G2
    24
    The
    PSD935G2
    Functional
    Blocks
    (cont.)
    9.1.1.8 Unlock Bypass Instruction
    The unlock bypass feature allows the system to program words to the flash memories
    faster than using the standard program instruction. The unlock bypass instruction is
    initiated by first writing two unlock cycles. This is followed by a third write cycle containing
    the unlock bypass command, 20h (see Table 8). The flash memory then enters the unlock
    bypass mode. A two-cycle Unlock Bypass Program instruction is all that is required to
    program in this mode. The first cycle in this instruction contains the unlock bypass
    programm command, A0h; the second cycle contains the program address and data.
    Additional data is programmed in the same manner. This mode dispenses with the initial
    two unlock cycles required in the standard program instruction, resulting in faster total
    programming time. During the unlock bypass mode, only the Unlock Bypass Program and
    Unlock Bypass Reset instructions are valid. To exit the unlock bypass mode, the system
    must issue the two-cycle unlock bypass reset instruction. The first cycle must contain the
    data 90h; the second cycle the data 00h. Addresses are don
    t care for both cycles. The
    Flash memory then returns to reading array data mode.
    9.1.1.9 Erasing Flash Memory
    9.1.1.9.1. Flash Bulk Erase Instruction
    The Flash Bulk Erase instruction uses six write operations followed by a Read operation of
    the status register, as described in Table 8. If any byte of the Bulk Erase instruction is
    wrong, the Bulk Erase instruction aborts and the device is reset to the Read Flash memory
    status.
    During a Bulk Erase, the memory status may be checked by reading status bits DQ5, DQ6,
    and DQ7, as detailed in section 9.1.1.7. The Error bit (DQ5) returns a
    1
    if there has been
    an Erase Failure (maximum number of erase cycles have been executed).
    It is not necessary to program the array with 00h because the PSD935G2 will automatically
    do this before erasing to 0FFh.
    During execution of the Bulk Erase instruction, the Flash memory will not accept any
    instructions.
    9.1.1.9.2 Flash Sector Erase Instruction
    The Sector Erase instruction uses six write operations, as described in Table 8. Additional
    Flash Sector Erase confirm commands and Flash sector addresses can be written
    subsequently to erase other Flash sectors in parallel, without further coded cycles, if the
    additional instruction is transmitted in a shorter time than the timeout period of about
    100 μs. The input of a new Sector Erase instruction will restart the time-out period.
    The status of the internal timer can be monitored through the level of DQ3 (Erase time-out
    bit). If DQ3 is
    0
    , the Sector Erase instruction has been received and the timeout is
    counting. If DQ3 is
    1
    , the timeout has expired and the PSD935G2 is busy erasing the
    Flash sector(s). Before and during Erase timeout, any instruction other than Erase suspend
    and Erase Resume will abort the instruction and reset the device to Read Array mode.
    It is not necessary to program the Flash sector with 00h as the PSD935G2 will do this
    automatically before erasing.
    During a Sector Erase, the memory status may be checked by reading status bits DQ5,
    DQ6, and DQ7, as detailed in section 9.1.1.7.
    During execution of the erase instruction, the Flash block logic accepts only Reset and
    Erase Suspend instructions. Erasure of one Flash sector may be suspended, in order to
    read data from another Flash sector, and then resumed.
    相關(guān)PDF資料
    PDF描述
    PSD935G3-15J Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD935G3-15JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD935G3-15M Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD935G3-15MI Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD935G3-15U Configurable Memory System on a Chip for 8-Bit Microcontrollers
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