參數(shù)資料
型號： PSMN005-75P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
中文描述： 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 6/13頁
文件大小： 271K
代理商： PSMN005-75P
Philips Semiconductors
PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 26 April 2002
6 of 13
9397 750 09743
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ah92
0
100
200
300
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
5.5 V
6 V
T
j
= 25 oC
20 V
5 V
6.5 V
8 V
7.5 V
10 V
7 V
V
GS
= 4.5 V
03ah94
0
20
40
60
80
100
I
D
(A)
0
1
2
3
4
5
6
V
GS
(V)
V
DS
> I
D
x R
DSon
T
j
= 175 oC
25 oC
03ah93
0
0.005
0.01
0.015
0
100
200
300
I
D
(A)
R
DSon
(
)
V
GS
= 20 V
T
j
= 25 oC
7 V
8 V
6.5 V
5.5 V
6 V
5 V
10 V
03aj03
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
)
----------------------------
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN005-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-75P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
PSMN006-20K 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX ultra low level FET
PSMN006-20K /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN006-20K,518 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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