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參數(shù)資料
| 型號： | PT3642 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60 |
| 封裝： | TO-60, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | PT3642 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 200 mA
BV
CEX
I
C
= 200 mA V
BE
= -1.5 V
BV
CBO
I
C
= 500
μ
A
I
CEO
V
CE
= 30 V
I
EBO
V
EB
= 4.0 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
UNITS
V
65
V
65
V
250
μ
A
μ
A
---
250
5.0
C
ob
f
t
V
CB
= 30 V
V
CE
= 28 V I
C
= 150 mA f = 100 MHz
f = 1.0 MHz
20
pF
400
MHz
P
out
G
P
η
C
V
CE
= 28 V
f = 175 MHz
13.5
5.8
70
W
dB
%
NPN SILICON RF POWER TRANSISTOR
PT3642
DESCRIPTION:
The
ASI PT3642
is Designed for
Class A,B,C Amplifier, Oscillator and
Driver Applications Covering 130 to
400MHz.
FEATURES INCLUDE:
Emitter Ballasted
Common Emitter Package
MAXIMUM RATINGS
I
C
3.0 A
V
CE
40 V
P
DISS
23 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
7.6 °C/W
PACKAGE STYLE TO- 60
1 = EMITTER 2 = BASE
3 = COLLECTOR CASE = EMITTER
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