參數(shù)資料
型號(hào): PT9701
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 18K
代理商: PT9701
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 20 mA
BV
CES
I
C
= 10 mA
BV
EBO
I
E
= 1.0 mA
h
FE
V
CE
= 5.0 V I
C
= 200 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
UNITS
V
45
V
3.5
V
15
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
7.0
pF
P
G
η
C
V
CE
= 28 V
P
out
= 5.0 W f = 400 MHz
10
50
12
55
dB
%
NPN SILICON RF POWER TRANSISTOR
PT9701
DESCRIPTION:
The
ASI PT9701
is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
I
C
1.25 A
V
CES
45 V
P
DISS
14 W @ T
C
= 25 °C
T
J
-55 °C to +200 °C
T
STG
-55 °C to +200 °C
θ
JC
12 °C/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
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