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參數(shù)資料
| 型號： | PTB20051 |
| 廠商： | ERICSSON |
| 英文描述： | 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor |
| 中文描述： | 6瓦，1.465-1.513 GHz的無線蜂窩射頻功率晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | PTB20051 |
PTB 20051
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V
(BR)CER
50
—
—
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
50
—
—
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
—
Volts
DC Current Gain
V
CE
= 10 V, I
C
= 0.7 A
h
FE
20
50
120
—
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 40 mA, f = 1.501 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 40 mA, f = 1.501 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 40 mA, f = 1.501 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 40 mA,
f = 1.501 GHz—all phase angles at frequency of test)
G
pe
8.0
—
—
dB
P-1dB
6.5
—
—
Watts
η
C
35
—
—
%
Ψ
—
—
5:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 40 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.465
10.7
11.2
11.9
21.0
1.489
9.4
11.8
10.2
20.3
1.513
8.1
12.8
9.7
18.3
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20053 | 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20074 | 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor |
| PTB20077 | 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20078 | 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20079 | 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20053 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20074 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20077 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20078 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20079 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor |
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